Check patentability & draft patents in minutes with Patsnap Eureka AI!

Measuring device and method for complex frequency characteristics of high-frequency microwave probe

A technology with high-frequency microwave and multiple-frequency characteristics, which is applied to measuring devices, measuring electrical variables, instruments, etc., can solve problems such as the inability to realize high-frequency microwave probe measurement, and achieve small jitter, high measurement accuracy, and high signal-to-noise ratio Effect

Active Publication Date: 2015-03-25
BEIJING INST OF RADIO METROLOGY & MEASUREMENT
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to improve a measuring device and method for the multiple frequency characteristics of high-frequency microwave probes, solve the problem of measuring high-frequency microwave probes that cannot be realized in the prior art, and realize intuitive and accurate measurement of the multiple frequency characteristics of high-frequency microwave probes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measuring device and method for complex frequency characteristics of high-frequency microwave probe
  • Measuring device and method for complex frequency characteristics of high-frequency microwave probe
  • Measuring device and method for complex frequency characteristics of high-frequency microwave probe

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] In order to illustrate the present invention more clearly, the present invention will be further described below in conjunction with preferred embodiments and accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. Those skilled in the art should understand that the content specifically described below is illustrative rather than restrictive, and should not limit the protection scope of the present invention.

[0045] Such as figure 1 As shown, the present invention discloses a measuring device for the complex frequency characteristics of a high-frequency microwave probe, which includes a femtosecond laser source 1, a beam splitter 2, an optical delay line 3, a chopper 4, a DC voltage source 5, Low-temperature gallium arsenide photoconductive switch 6 , electro-optic sampling probe 7 , short circuit 9 , Wollaston prism 10 , balanced photodetector 11 , lock-in amplifier 12 , signal generator 13 , and data acquisition and processin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a measuring device and method for complex frequency characteristics of a high-frequency microwave probe. The device comprises a femtosecond laser source, a beam splitter, an optical delay line, a chopper, a direct-current voltage source, a low temperature GaAs photoconductive switch, an electro-optic sampling probe, a short circuiter, a Wollaston prism, balanced photoelectric detector, a lock-in amplifier, a signal generator and a data acquisition and processing unit. Due to the technical scheme, the complex frequency characteristics of the high-frequency microwave probe can be obtained, measurement accuracy is high, and the problem that according to an existing measuring technology, the transmission characteristic of the high-frequency microwave probe cannot be accurately measured.

Description

technical field [0001] The invention relates to a measuring device and method for complex frequency characteristics. More specifically, it relates to a device and method for measuring the complex frequency characteristics of a high-frequency microwave probe. Background technique [0002] Microwave probe is an important tool for on-wafer inspection of coplanar semiconductor integrated circuits. Using microwave probe on-wafer inspection technology, the high-frequency characteristics of integrated circuits or devices can be directly measured on the chip before the semiconductor chip is divided and packaged, thereby To achieve on-wafer screening, the use of microwave probes is of great significance for improving the microwave packaging of the package and determining the working model of the circuit or device. When using a microwave probe for testing, the obtained data actually contains the complex frequency characteristics of the microwave probe itself. Therefore, in order to o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R35/00
Inventor 谢文龚鹏伟马红梅杨春涛谌贝姜河
Owner BEIJING INST OF RADIO METROLOGY & MEASUREMENT
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More