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Transistor devices with field electrodes

A field electrode, transistor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as reducing voltage blocking capability

Active Publication Date: 2018-11-09
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increased doping concentration and / or reduced length may cause reduced voltage blocking capability

Method used

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  • Transistor devices with field electrodes
  • Transistor devices with field electrodes
  • Transistor devices with field electrodes

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Experimental program
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Embodiment Construction

[0018] Reference is made to the accompanying drawings in the following detailed description. The drawings form a part of the description and show, by way of illustration, specific embodiments in which the invention may be practiced. It is to be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise.

[0019] figure 1 A vertical cross-sectional view of a transistor device according to one embodiment is shown. The transistor device comprises a semiconductor body 100 with a first surface 101 . exist figure 1 The vertical section plane shown in is the section plane normal to this first surface 101 . The semiconductor body 100 may contain conventional semiconductor materials such as silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN) and the like.

[0020] refer to figure 1 , the transistor device comprises a source region 13 , a drift region 11 and a body re...

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PUM

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Abstract

The invention relates to transistor devices having field electrodes. A transistor device includes a source region, a drift region, and a body region disposed between the source region and the drift region. A gate electrode is adjacent to the body region and is dielectrically insulated from the body region by a gate dielectric. The field electrode is arranged adjacent to the drift region and the body region, spaced apart from the gate electrode in a first direction perpendicular to the direction in which the source region and the drift region are spaced apart, and comprising the field electrode and the field electrode dielectric Orthogonal. The field electrode dielectric insulates the field electrode at least from the drift region dielectric. The field electrode arrangement has a first width adjacent to the drift region and a second width adjacent to the body region and the first width is greater than the second width.

Description

technical field [0001] Embodiments of the invention relate to transistor devices, in particular transistor devices having field electrodes. Background technique [0002] Transistors, especially MOS (Metal Oxide Semiconductor) transistors such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) are widely used for applications such as drive applications, power conversion applications, automotive applications, Electronic switches in many different applications such as consumer electronics applications. It is desirable for those transistors to have a predefined voltage blocking capability that depends on the specific application, and to have a low on-resistance (the resistance of the transistor in the on-state). [0003] MOS transistors used as electronic switches (which are often called power MOS transistors) contain a drift region between a bulk region and a drain region (also called emitter region in IGBTs). The on-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/40H01L21/336
CPCH01L29/0623H01L29/66348H01L29/66734H01L29/7397H01L29/7813H01L29/0878H01L29/407H01L29/41766H01L29/42368H01L29/6634H01L29/66727H01L21/0223H01L21/02255H01L21/31144H01L29/0865H01L29/1095H01L29/41741
Inventor O.布兰克R.西米尼克
Owner INFINEON TECH AUSTRIA AG