thin film transistor
A thin-film transistor and semiconductor technology, applied in transistors, semiconductor devices, electrical components, etc., can solve the problems of small on-state current, reduced channel opening ratio of liquid crystal display devices, slow switching speed of dual-gate thin-film transistors, etc. The effect of switching speed
Active Publication Date: 2019-02-12
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
However, increasing the width of the channel in the double-gate thin film transistor will reduce the aperture ratio of the liquid crystal display device; reducing the length of the channel of the double-gate thin film transistor will cause the short channel effect
To sum up, the on-state current of the double-gate thin film transistor in the prior art is relatively small, resulting in a slow switching speed of the double-gate thin film transistor
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[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0030] see figure 1 , figure 1 It is a schematic cross-sectional structure diagram of a thin film transistor according to a preferred embodiment of the present invention. The thin film transistor (thin film transistor, TFT) 100 includes a substrate 110, a first gate 120 stacked on the surface of the substrate 110, a first gate insulating layer 130, a semiconductor layer 140, an etching stop layer (etching stop layer) ) 150 and the second gate 160. Wherein, ...
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A thin film transistor (100). The thin film transistor (100) comprises a substrate (110); a first gate (120), a first gate insulation layer (130), a semiconductor layer (140), an etching stop layer (150) and a second gate (160) that are stacked on the surface of the substrate (110); and a source (181) and a drain (182). The thickness of the semiconductor layer (140) ranges from 200 nm to 2,000 nm. The etching stop layer (150) is provided with a first through hole (151) and a second through hole (152), and the first through hole (151) and the second through hole (152) are arranged corresponding to the semiconductor layer (140). The source (181) and the drain (182) penetrate through the first through hole (151) and the second through hole (152) respectively and are connected to the semiconductor layer (140). The thin film transistor (100) has high ON-state current and a high switching speed.
Description
technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a thin film transistor with relatively large on-state current. Background technique [0002] A thin film transistor (thin film transistor, TFT), as a switching element, is widely used in electronic devices such as liquid crystal display devices. As a specific structure of thin film transistors, double-gate thin film transistors have attracted widespread attention because they can be applied to high resolution (high pixels per inch, high PPI) display devices. For a double-gate TFT, a high on-state current can increase the switching speed of the double-gate transistor. In order to increase the on-state current of the double-gate thin film transistor, a common practice is to increase the width of the channel in the double-gate thin film transistor or to reduce the length of the channel. However, increasing the channel width of the double-gate thin film transistor...
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IPC IPC(8): H01L29/786H01L29/10
CPCH01L29/786
Inventor 石龙强曾志远张合静胡宇彤
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD