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Memory cell, semiconductor device structure, memory system and manufacturing method

A technology for memory cells and precursors, which is applied in the manufacture of semiconductor/solid-state devices, the manufacture/processing of semiconductor devices, and electromagnetic devices, etc., can solve problems such as weakening thermal stability of bits, unfavorable data preservation, and lowering energy barriers.

Active Publication Date: 2016-08-31
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Reducing magnetic strength or in extreme cases altering magnetic orientation can lower the energy barrier and impair bit thermal stability, and can adversely affect data retention in the resulting STT-MRAM cells

Method used

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  • Memory cell, semiconductor device structure, memory system and manufacturing method
  • Memory cell, semiconductor device structure, memory system and manufacturing method
  • Memory cell, semiconductor device structure, memory system and manufacturing method

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Embodiment Construction

[0029] Memory cells, semiconductor device structures including such memory cells, memory systems, and methods of forming such memory cells and memory cell structures are disclosed. The memory cell includes a cell core having a magnetic region exhibiting a perpendicular magnetic orientation at a magnetic strength. The cell core is patterned from a stress-compensated precursor structure comprising a stress-compensating material formed to rest on the original precursor structure of magnetic and non-magnetic materials in which At least one of exhibits the perpendicular magnetic orientation at initial magnetic strength. The processes, materials and conditions used to form the stress compensating material can be selected to tailor the net strain exhibited by the stress compensated precursor structure. After etching the cell core from the stress-compensated precursor structure, one or more of the magnetic regions of the formed cell core exhibit the properties of the original precurs...

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Abstract

Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into pristine precursor structures in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress compensating material, such as a non-sacrificial conductive material, is formed to be disposed on the original precursor structure to form a stress compensated precursor structure in a state of net beneficial stress. Thereafter, the stress compensated precursor structure can be patterned to form the cell core of the memory cell. The net beneficial stress state of the stress-compensated precursor structure is adapted to form one or more magnetic regions in the cell core exhibiting perpendicular magnetic orientation without degrading the magnetic properties of the one or more magnetic regions strength. The invention also discloses memory unit, memory unit structure, semiconductor device structure and spin torque transfer magnetic random access memory STT MRAM system.

Description

[0001] priority claim [0002] This application asserts US Patent Application No. 13 / 527,173 "Memory Cells, Semiconductor Device Structures, Memory Systems, and Methods of Fabrication" filed on June 19, 2012 rights on the filing date. technical field [0003] In various embodiments, the present invention relates generally to the field of memory device design and fabrication. More particularly, the present invention relates to the design and fabrication of memory cells characterized as spin torque transfer magnetic random access memory (STT-MRAM) cells. Background technique [0004] Magnetic Random Access Memory (MRAM) is a non-volatile computer memory technology based on magnetoresistance. MRAM is non-volatile and thus can retain memory contents when the MRAM memory device is powered down. MRAM data is stored by magnetoresistive elements. In general, a magnetoresistive element in an MRAM cell is made of two magnetic regions, each of which accepts and maintains a magneti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15H01L21/8247H01L27/115H10N50/10H10N50/01H10N50/80
CPCG11C11/161H10N50/01H10N50/10H10B61/22H10N50/80
Inventor 维托·库拉古尔特杰·S·桑胡斯蒂芬·J·克拉梅尔
Owner MICRON TECH INC