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A kind of thin film transistor and its preparation method and application

A technology of thin film transistors and oxide semiconductors, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems affecting the performance of flat panel display devices, unstable performance of metal oxide thin film transistors, etc., and achieve low cost and high performance Effect of recovery and stability improvement

Active Publication Date: 2018-12-18
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] For this reason, what the present invention is to solve is the unstable performance of metal oxide thin film transistors in the prior art, which seriously affects the performance of flat panel display devices.

Method used

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  • A kind of thin film transistor and its preparation method and application
  • A kind of thin film transistor and its preparation method and application

Examples

Experimental program
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Embodiment 1

[0038] This embodiment provides a thin film transistor and its preparation method, such as figure 1 As shown, the thin film transistor includes a substrate 100, an electric heating layer 110, a buffer layer 120, a gate layer 210, a gate insulating layer 220, The metal oxide semiconductor layer 230 and the source / drain electrode layer, the source electrode and the drain electrode in the source / drain electrode layer are respectively in contact with the metal oxide semiconductor layer 230 . Wherein, the projection area of ​​the electric heating layer 110 on the substrate 100 covers the projection area of ​​the metal oxide semiconductor layer 230 on the substrate 100; Apply voltage to the electric heating layer to generate heat.

[0039]The TFT described in this embodiment has a bottom-gate structure. As other embodiments of the present invention, the TFT can also have a top-gate structure or a double-gate structure, both of which can achieve the purpose of the present invention ...

Embodiment 2

[0063] This embodiment provides a flat panel display device, including a display unit, and the display unit is an organic light emitting diode further comprising a first electrode, an organic layer and a second electrode.

[0064] The flat panel display device further includes the thin film transistor described in Embodiment 1, and the first electrode is electrically connected to the source 241 or the drain 242 of the thin film transistor. The driving circuit diagram of the flat panel display device is as follows figure 2 As shown, it includes an organic light emitting diode (OLED), and a pixel circuit connected to a data line (DATA) and a scan line (SCAN). The pixel circuit shown includes a driving thin film transistor (T2) connected to the power supply (VDD), connected to the cathode of the organic light emitting diode (OLED), and a switching thin film transistor (T2) connected between the driving thin film transistor (T2) and the data line (DATA). T1), and a capacitor (C)...

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Abstract

A thin film transistor and its preparation method and application. In the thin film transistor of the present invention, an electric heating layer and a buffer layer are directly and sequentially formed on the substrate, the metal oxide semiconductor layer is arranged on the buffer layer, and the projected area of ​​the electric heating layer on the substrate covers the metal oxide The projected area of ​​the semiconductor layer on the substrate; when the thin film transistor is in the off state, a voltage is applied to the electric heating layer, heat is generated and transferred to the metal oxide semiconductor layer, and the electrons captured by the defect state in the metal oxide semiconductor layer are released come out to repair the defect state, so that the characteristics of the thin film transistor are restored, the stability of the thin film transistor is improved, and the performance of the flat panel display device to which it is applied is optimized. At the same time, in the method for preparing a thin film transistor according to the present invention, the stability of the thin film transistor can be improved only by providing an electric heating layer on the substrate and a buffer layer insulating the electric heating layer from the thin film transistor. The process is simple, the cost is low, and industrialized production can be easily realized.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a preparation method thereof, and an application in a flat panel display device. Background technique [0002] In recent years, with the continuous increase in the size of active matrix flat panel display devices and the continuous increase in the frequency of driving circuits, the mobility of existing amorphous silicon thin film transistors is difficult to meet the requirements; the mobility of amorphous silicon thin film transistors is generally 0.5 cm 2 / V·s or so, and an active matrix flat panel display device over 80in requires 1cm when the driving frequency is 120Hz 2 Mobility above / V·s. [0003] In the prior art, high-mobility thin film transistors are mainly polysilicon thin film transistors and metal oxide thin film transistors. Among them, the excimer laser annealing crystallization (ELA) process required in the preparation process of polysi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/06H01L29/66742H01L29/786G02F1/1362H10K59/00
Inventor 施露习王锋蔡世星
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD