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6000 nm long-wave pass infrared filtering sensitive element

A sensitive component, 161nm technology, applied in the field of infrared filter sensitive components, can solve the problems of low signal-to-noise ratio and poor precision, and achieve the effect of improving signal-to-noise ratio and test accuracy

Inactive Publication Date: 2015-05-06
MULTI IR OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the current infrared filter sensitive elements have low signal-to-noise ratio and poor precision, which cannot meet the needs of market development.

Method used

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Experimental program
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Embodiment 1

[0014] Such as figure 1 and figure 2 As shown, a 6000nm long-wave infrared filter sensitive element described in this embodiment includes a substrate 2 with Si as the raw material, Ge and ZnS as the first coating layer 1 and Ge and ZnS as the second coating layer 3, And the substrate 2 is arranged between the first coating layer 1 and the second coating layer 3, and the first coating layer 1 is sequentially arranged from the inside to the outside including a Ge layer with a thickness of 237nm, a ZnS layer with a thickness of 171nm, and a ZnS layer with a thickness of 119nm. Ge layer, 107nm thick ZnS layer, 161nm thick Ge layer, 186nm thick ZnS layer, 111nm thick Ge layer, 205nm thick ZnS layer, 85nm thick Ge layer, 205nm thick ZnS layer, 78nm thick Ge layer , 254nm thick ZnS layer, 147nm thick Ge layer, 249nm thick ZnS layer, 105nm thick Ge layer, 169nm thick ZnS layer, 121nm thick Ge layer, 176nm thick ZnS layer, 213nm thick Ge layer, 228nm Thick ZnS layer, 161nm thick Ge ...

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Abstract

The invention discloses a 6000 nm long-wave pass infrared filtering sensitive element. The 6000 nm long-wave pass infrared filtering sensitive element comprises a substrate taking Si as raw material, a first film coating layer made of Ge and ZnS and a second film coating layer made of Ge and ZnS; the substrate is arranged between the first film coating layer and the second film coating layer. The 6000 nm long-wave pass infrared filtering sensitive element can largely improve the signal-to-noise ratio and improve the testing accuracy during the temperature measurement process, and is applicable to popularize and use on a large scale. The 5% Cut on of the filtering sensitive element is equal to 6000+ / -300 nm, 7500-13500 nm; Tavg is not less than 70%, 400-5500 nm; Tavg is not more than 0.1%, and T is not more than 3.0%.

Description

technical field [0001] The invention relates to the field of infrared filter sensitive elements, in particular to a 6000nm long-wave infrared filter sensitive element. Background technique [0002] Infrared thermal imager (thermal imager or infrared thermal imager) detects infrared energy (heat) through non-contact and converts it into an electrical signal, and then generates thermal images and temperature values ​​on the display, and can monitor the temperature values A detection device for computing. Infrared thermal imagers (thermal imagers or infrared thermal imagers) are able to accurately quantify or measure detected heat, allowing you not only to observe thermal images, but also to accurately identify and rigorously analyze heat-producing fault areas. [0003] The detector of the infrared thermal imager is the key to realize the conversion of infrared energy (thermal energy) into electrical signals. Since the infrared energy (thermal energy) emitted by various organi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20
CPCG02B5/208
Inventor 王继平吕晶余初旺
Owner MULTI IR OPTOELECTRONICS