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Graphene/noncrystalline silicon solar battery and preparation method thereof

A solar cell and graphene technology, applied in the field of solar energy, can solve the problems of high cost of battery power generation and restrictions on wide application, and achieve the effects of easy promotion, simple preparation process, and low cost

Inactive Publication Date: 2015-05-13
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In silicon-based solar cells, monocrystalline silicon has high conversion efficiency, but the high cost of battery power generation limits its wide application. Amorphous silicon has a high absorption coefficient in visible light, which can achieve low-cost and large-area film deposition. , amorphous silicon thin film technology will be the mainstream of solar cell market in the future

Method used

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  • Graphene/noncrystalline silicon solar battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1) Clean the glass substrate in deionized water and dry it;

[0022] 2) Deposit indium-doped tin oxide with a thickness of 500 nanometers on a glass substrate by magnetron sputtering;

[0023] 3) Deposit a 5nm-thick n-type amorphous silicon film layer on the indium-doped tin oxide layer by chemical vapor deposition technology, and then deposit a 10-micron-thick i-type amorphous silicon film layer on it, and pre-coat the ITO layer. Reserve the area for growing the first electrode;

[0024] 4) Transfer single-layer graphene onto the i-type amorphous silicon film layer;

[0025] 5) Coating silver paste on the graphene and the reserved area of ​​the ITO layer and drying to obtain a graphene / amorphous silicon solar cell.

Embodiment 2

[0027] 1) Clean the flexible PET substrate in deionized water and dry it;

[0028] 2) Deposit 1 nm thick gold on PET substrate by magnetron sputtering;

[0029] 3) Use plasma-enhanced chemical vapor deposition technology to grow a 5-nanometer-thick n-type amorphous silicon film layer on the gold conductive layer, and then use the same technology to deposit a 10-nanometer-thick i-type amorphous silicon film layer on it. Reserve an area for growing the first electrode on the conductive layer;

[0030] 4) Transfer 10 layers of graphene onto the i-type amorphous silicon film layer;

[0031] 5) Coating titanium-palladium-silver composite electrodes on the graphene and the reserved area on the gold conductive layer by electron beam evaporation to obtain graphene / amorphous silicon solar cells.

Embodiment 3

[0033] 1) Clean the flexible PI substrate in deionized water and dry it;

[0034] 2) AZO with a thickness of 40 nm was deposited on the PI substrate by magnetron sputtering;

[0035] 3) On the AZO layer, use plasma-enhanced chemical vapor deposition technology to grow a 500-nanometer-thick n-type amorphous silicon film layer, and then use the same technology to deposit a 0.8-micron-thick i-type amorphous silicon film layer on it, and on the AZO layer The area reserved for growing the first electrode;

[0036] 4) Transfer 5 layers of graphene onto the i-type amorphous silicon film layer;

[0037] 5) Coat the reserved area on the graphene and the AZO layer by depositing nickel electrodes using thermal evaporation technology to obtain graphene / amorphous silicon solar cells.

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Abstract

The invention relates to a graphene / noncrystalline silicon solar battery and a preparation method thereof; the battery is sequentially from bottom to top provided with a substrate, a conductive film coated layer, a n-type noncrystalline silicon film layer, a i-type noncrystalline silicon film layer, and a graphene layer; the solar battery is further provided with a first electrode and a second electrode; the first electrode is arranged on the conductive film coated layer; the second electrode is arranged on the graphene layer. The preparation method thereof comprises the following steps: firstly depositing the conductive film coated layer on the substrate; then depositing the n-type noncrystalline silicon layer; and then depositing the i-type noncrystalline silicon film layer; and then transferring the graphene onto the noncrystalline silicon layer; and finally respectively making the electrodes on the graphene layer and the conductive film coated layer, thereby obtaining the solar battery. A novel solar battery with high transformation efficiency can be obtained on the basis of low cost and simple technology.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof, in particular to a graphene / amorphous silicon solar cell and a preparation method thereof, and belongs to the technical field of solar energy. Background technique [0002] Now the energy crisis and environmental pollution are major challenges faced by human beings. It is very important to develop new energy and renewable energy. As a new type of green energy, solar cells affect the sustainable development of human beings. Currently, crystalline silicon solar cells account for ~90% of the market, as silicon is the second most stored element on Earth. In silicon-based solar cells, monocrystalline silicon has high conversion efficiency, but the high cost of battery power generation limits its wide application. Amorphous silicon has a high absorption coefficient in visible light, which can achieve low-cost and large-area film deposition. , Amorphous silicon thin film technology will ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/075H01L31/20
CPCH01L31/028H01L31/075H01L31/20Y02E10/547Y02E10/548Y02P70/50
Inventor 林时胜徐志娟李晓强王朋章盛娇吴志乾钟汇凯徐文丽陈红胜
Owner ZHEJIANG UNIV