Solar cell based on GaN (gallium nitride) nanowire arrays and preparation method thereof
A nanowire array and solar cell technology, applied in the field of solar cells, can solve the problems of difficulty in reducing the light reflection coefficient of the substrate, difficulty in obtaining high-quality suede light trapping, and increasing defect density on the surface of the substrate, etc. Light effects, improved performance, simple process effects
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Embodiment 1
[0037] Embodiment 1, making a GaN nanowire array solar cell with each GaN nanowire having a diameter of 50 nm and a length of 2 μm.
[0038] refer to image 3 , the production steps of this example are as follows:
[0039] Step 1: Clean and polish the P-type silicon substrate to remove surface pollutants and surface mechanical damage.
[0040] (1.1) Use acetone and isopropanol to alternately perform ultrasonic cleaning on the P-type silicon substrate to remove organic contamination on the substrate surface;
[0041] (1.2) Prepare a 1:1:3 mixed solution of ammonia water, hydrogen peroxide, and deionized water, and heat it to 120°C. Place the P-type silicon substrate in the mixed solution for 12 minutes and rinse it with deionized water after taking it out. , to remove inorganic pollutants on the surface of the P-type silicon substrate;
[0042] (1.3) Soak the P-type silicon substrate with HF acid buffer for 2 minutes to remove the oxide layer on the surface;
[0043] (1.4) ...
Embodiment 2
[0060] Example 2, making a GaN nanowire array solar cell with each GaN nanowire having a diameter of 75 nm and a length of 4 μm.
[0061] refer to image 3 , the production steps of this example are as follows:
[0062] Step 1: cleaning and polishing the P-type silicon substrate to remove surface pollutants and surface mechanical damage.
[0063] This step is the same as Step 1 of Example 1.
[0064] Step 2: Depositing a P-type doped GaN epitaxial layer.
[0065] Use solid metal gallium as the Ga source, ammonia and nitrogen as the nitrogen source, and CP 2 Mg is used as a dopant impurity, and the temperature is first raised to 950°C and NH3 is passed through for in-situ cleaning for 20 minutes; then ammonia gas, nitrogen gas, CP 2 Mg, the temperature is raised to 1000° C., and a P-type doped GaN epitaxial layer with a thickness of 8 μm is deposited on a P-type silicon substrate by using a low-pressure chemical vapor deposition LPCVD process.
[0066] Step 3: Fabricate a ...
Embodiment 3
[0079] Embodiment 3, making a GaN nanowire array solar cell in which each GaN nanowire has a diameter of 100 nm and a length of 6 μm.
[0080] refer to image 3 , the production steps of this example are as follows:
[0081] Step A: cleaning and polishing the P-type silicon substrate to remove surface pollutants and surface mechanical damage.
[0082] This step is the same as Step 1 of Example 1.
[0083] Step B: Depositing a P-type doped GaN epitaxial layer.
[0084] Use solid metal gallium as the Ga source, ammonia and nitrogen as the nitrogen source, and CP 2 Mg is used as a doping impurity, and the temperature is first raised to 950°C and NH3 is passed through for in-situ cleaning for 20 minutes;
[0085] And then into the ammonia, nitrogen, CP 2 Mg, the temperature is raised to 1100° C., and a P-type doped GaN epitaxial layer with a thickness of 10 μm is deposited on a P-type silicon substrate by using a low-pressure chemical vapor deposition LPCVD process.
[0086]...
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