A kind of preparation method of fes2 nanotube film
A technology of nanotubes and nanotube arrays, which is applied in the field of FeS2 nanotube thin film preparation, can solve the problems of uncontrollable nanotube wall uniformity and unsatisfactory nanotube wall uniformity, and achieve the effect of uniform tube wall thickness
Inactive Publication Date: 2016-06-29
ZHEJIANG UNIV
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Problems solved by technology
[0005] In order to overcome the existing technology to prepare FeS 2 Thin film method exists FeS 2 The morphology of the nanotubes and the uniformity of the tube walls are also uncontrollable, FeS 2 The shortcoming of the unsatisfactory tube wall uniformity of nanotube, the present invention provides a kind of can make FeS 2 Particles are evenly distributed and piled up to form FeS with uniform wall thickness 2 Nanotube thin film preparation method
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[0035] combined with Figure 1-8 , to further illustrate the present invention:
[0036] a FeS 2 The preparation method of nanotube thin film, comprises the following steps:
[0037] 1) Substrate pretreatment: In this example, the size is 50mm 15 2.2mm conductive glass is used as the substrate, but the size of the substrate is not limited to the example of this embodiment. The substrate was ultrasonically cleaned in acetone solution for 15 minutes, then ultrasonically cleaned in absolute ethanol for 15 minutes, and finally ultrasonically cleaned in deionized water for 15 minutes; the cleaned substrate was dried in a constant temperature drying oven at 100°C, and the dried Base spare;
[0038] 2) Add 0.05mol of zinc acetate dihydrate to the beaker, dissolve it with 50ml of ethylene glycol methyl ether, add 3ml of ethanolamine, and stir at a constant temperature of 60°C for 30 minutes until completely dissolved, forming a uniform and transparent seed layer solution; mag...
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Abstract
The invention discloses a preparation method of a FeS2 nanotube film. The preparation method of the FeS2 nanotube film comprises the following steps of taking FTO (Fluorine-doped Tin Oxide) conductive glass as a substrate; preparing a seed layer solution; immersing a substrate into the seed layer solution at room temperature, carrying out dip coating, and forming an uniform ZnO nano crystal seed layer on the surface of the substrate; preparing a precursor solution; forming an uniform compact ZnO nanorod array film on the surface of the substrate; preparing a modification solution; modifying the ZnO nanorod array and coating a uniform negative charge layer on the external surface of the ZnO nanorod; putting the prepared ZnO nanorod array film modified by PSS / PDDA in a FeCl3 aqueous solution for standing; coating the FTO substrate with a Fe2O3 nanotube array film; taking the Fe2O3 nanotube array film as an intermediate product film; vulcanizing the Fe2O3 nanotube array and converting the Fe2O3 nanotube array to a FeS2 nanotube array. The preparation method of the FeS2 nanotube film has the advantage of uniformly distributing and stacking FeS2 particles to form the nanotube.
Description
technical field [0001] The present invention relates to a kind of FeS 2 Nanotube film preparation method. technical background [0002] Pyrite Phase FeS 2 As an important indirect bandgap semiconductor, it has great potential to be applied in the active layer of solar photovoltaic and photoelectrochemical cells. FeS 2 The many unique properties of it laid a solid foundation for its future application. First, FeS 2 with a suitable forbidden band width (E g =0.95eV), extremely high light absorption coefficient (α>10 when the wavelength λ≤700nm 5 cm -1 ), sufficient minority carrier diffusion length (100-1000nm). These outstanding optoelectronic properties ensure enough light absorption that only 40nm thick film can absorb 90% of the incident light. In addition, compared with other sulfur compound semiconductors, FeS 2 Environmental compatibility, such as abundant constituent elements, non-toxicity, low cost, and excellent stability against photocorrosion have furt...
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IPC IPC(8): H01L31/20H01L31/0296
CPCH01L31/0296H01L31/20Y02P70/50
Inventor 汪牡丹薛东鹏陈陈旭凌国平方攸同孟亮刘嘉斌
Owner ZHEJIANG UNIV