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Quantitative reticle distortion measurement system

A technology of deformation map and irradiation system, which is applied in measuring device, photolithographic process exposure device, photolithographic process of pattern surface, etc., can solve the problems of inability to measure at the same time, bulky equipment, etc.

Inactive Publication Date: 2015-05-27
ASML HLDG NV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, each of these techniques is only capable of measuring in-plane deformation or out-of-plane deformation, not both
Furthermore, techniques such as backward-diffraction interferometry require bulky equipment, which are not suitable for use in the space constraints imposed by many lithography systems

Method used

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  • Quantitative reticle distortion measurement system
  • Quantitative reticle distortion measurement system
  • Quantitative reticle distortion measurement system

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Embodiment Construction

[0021] This specification discloses one or more embodiments that incorporate the features of this invention. The disclosed embodiments are merely exemplary of the invention. The scope of the present invention is not limited to these disclosed embodiments. The invention is defined by the appended claims.

[0022] The described embodiments and references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," etc. mean that the described embodiments may include particular features, structures, or characteristics, but each embodiment It may not be necessary to include all specific features, structures or characteristics. Also, these paragraphs are not necessarily referring to the same embodiment. Furthermore, when particular features, structures or characteristics are described in conjunction with an embodiment, it should be understood that it is within the scope of knowledge of those skilled in the art to implement such features, structures or chara...

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Abstract

A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support constructed to hold a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus further includes an encoder head designed to scan over a surface of the patterning device to determine a distortion in a first direction along a length of the patterning device and a distortion in a second direction substantially perpendicular to the surface of the patterning device.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 61 / 707,123, filed September 28, 2012, which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to lithographic apparatus and measuring reticle deformation. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. Such a pattern may be transferred onto a target portion (eg comprising part of a die, one or several dies) on a substrate (eg a silicon wafer). Typically, pattern transfer is by imaging the pattern onto a layer of radia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70783G03F7/7085G01B11/2513G01D5/347G03F7/70191G03F7/70716
Inventor M·成达S·鲁T·德威尔特I·阿蒂斯
Owner ASML HLDG NV