CMOS circuit structure, its manufacturing method, display substrate and display device

Abstract

The invention discloses a CMOS circuit structure, a manufacturing method thereof, a display substrate and a display device. In the method, forming patterns of a PMOS semiconductor layer and an NMOS semiconductor layer includes: forming an amorphous silicon semiconductor layer located in a PMOS region on a base substrate The pattern of the pattern and the pattern of the metal oxide semiconductor layer located in the NMOS region; the pattern of the amorphous silicon semiconductor layer and the pattern of the metal oxide semiconductor layer are first annealed; the pattern of the polysilicon semiconductor layer is doped with P-type ions; In this way, when the amorphous silicon semiconductor layer is annealed to convert the amorphous silicon semiconductor layer into a polysilicon semiconductor layer, the metal oxide semiconductor layer is heated simultaneously by the annealing treatment so that the metal oxide semiconductor layer undergoes a regrowth process, Defects inside the metal oxide semiconductor layer can be reduced, so that the problem of threshold voltage drift in the NMOS region can be improved, and the performance of the NMOS region can be improved.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to a CMOS circuit structure, a manufacturing method thereof, a display substrate and a display device. Background technique [0002] Complementary Metal Oxide Semiconductor (CMOS) is composed of P-channel Metal Oxide Semiconductor (PMOS, Positive Channel Metal Oxide Semiconductor) and N-channel Metal Oxide Semiconductor (NMOS, Negative Channel Metal Oxide Semiconductor). constitute. [0003] Currently, Low Temperature Poly-silicon (LTPS) technology is generally used to fabricate the semiconductor layers of the PMOS region and the NMOS region in the CMOS circuit. Because the production process of using LTPS technology to make CMOS circuits is more complicated and the production cost is relatively high, therefore, the use of LTPS technology to make the semiconductor layer of the PMOS area in the CMOS circuit and the use of metal oxide materials to make the semiconductor layer of th...

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Problems solved by technology

Because the manufacturing process of CMOS circuits using LTPS technology is more complicated and the production cost is higher, therefore, the use of LTPS technology to make the semiconductor layer in the PMOS region of the CMOS circuit and the use of metal oxide materials to make the semiconductor layer in the NMOS region of the CMOS circuit have emerged. However, there is a serious drift phenomenon in the threshold voltage of the NMOS region in the CMOS circuit made by the manufacturing process (such as figure 1 shown), the performance of the NMOS region in this CMOS circuit is not stable

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