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Schottky Diode With Reduced Forward Voltage

A Schottky contact, conductive type technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as the influence of the lead-to-voltage cut-off current

Inactive Publication Date: 2015-06-03
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] But changes in the turn-on voltage due to changes in semiconductor doping, semiconductor material, or Schottky metal also have an impact on the cut-off current

Method used

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  • Schottky Diode With Reduced Forward Voltage
  • Schottky Diode With Reduced Forward Voltage
  • Schottky Diode With Reduced Forward Voltage

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Embodiment Construction

[0014] Embodiments of the present invention will be further described below with reference to the accompanying drawings. However, the invention is not limited to the specifically described embodiments but can be modified and altered in an appropriate manner. It is within the scope of the present invention to suitably combine individual features and feature combinations of one embodiment with features and feature combinations of another embodiment in order to obtain further inventive embodiments.

[0015] Before an exemplary embodiment of the present invention is further explained below with reference to the figures, it should be pointed out that identical elements in the figures are assigned the same or similar reference numerals and that a repeated description of these elements is omitted. The figures show only a part of the device and the device may include other elements. Furthermore, the figures are not necessarily to scale. Instead, the emphasis is on the exposition of ...

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Abstract

A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface.

Description

technical field [0001] The present disclosure relates to semiconductor devices and methods of manufacturing the same. In particular, inrush current-resistant Schottky diodes and methods for their manufacture, for example from SiC, are described. Background technique [0002] Schottky diodes have, in addition to their rapidity compared to pin diodes, a small voltage drop in the conduction direction. The voltage drop in the conduction direction, also referred to as the through voltage, is determined by the material of the Schottky metal and by the doping of the semiconductor at the Schottky contact. Besides silicon, other semiconductor materials can also be used for Schottky diodes. Especially for higher cut-off voltages, silicon carbide (SiC) Schottky diodes are often used. [0003] However, changes in the forward voltage due to semiconductor doping, changes in the semiconductor material or Schottky metals also have an influence on the cut-off current. [0004] The presen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/36H01L29/1608H01L29/66143H01L29/872
Inventor J. P. 康拉特R. 鲁普H-J. 舒尔策
Owner INFINEON TECH AG