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Light emitting diode epitaxial wafer

A technology of light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as the reduction of hole injection efficiency, reduce the internal polarized electric field, improve the uniform distribution and expansion effect of holes, and improve luminescence. The effect of efficiency

Active Publication Date: 2015-06-03
HC SEMITEK SUZHOU
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Problems solved by technology

[0006] In order to solve the problem in the prior art that the high band gap caused by the electron blocking layer and the lower hole injection efficiency caused by the lattice difference, the embodiment of the present invention provides a light-emitting diode epitaxial wafer

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Embodiment

[0027] An embodiment of the present invention provides an LED epitaxial wafer, see figure 1 , the epitaxial wafer includes a substrate 10, a first semiconductor layer 20, an active layer 30, an electron blocking layer 40, and a second semiconductor layer 50 sequentially formed on the substrate 10, and the first semiconductor layer 20 includes an N-type GaN layer ( That is, an N-type layer), and the second semiconductor layer 50 includes a P-type GaN layer (that is, a P-type layer).

[0028] The electron blocking layer 40 includes a first sublayer 41 formed on the active layer 30 and a P-type doped second sublayer 42 formed on the first sublayer 41 .

[0029] The first sublayer 41 includes a u-GaN layer and an Al layer sequentially disposed on the active layer 30 1-y Ga y N layer; alternatively, the first sublayer 41 includes u-GaN / Al 1-y Ga y N superlattice, 0<y<1.

[0030] The second sublayer 42 includes In sequentially disposed on the first sublayer 41 x Ga 1-x N laye...

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Abstract

The invention discloses a light emitting diode epitaxial wafer, and belongs to the technical field of a light emitting diode. The epitaxial wafer comprises a substrate, as well as a first semiconductor layer, an active layer, an electron barrier layer and a second semiconductor layer which are formed sequentially on the substrate; the electron barrier layer comprises a first sub layer formed on the active layer and a p-type doped second sub layer formed on the first sub layer; the first sub layer comprises a u-GaN layer and an Al1-yGayN layer arranged sequentially on the active layer; or the first sub layer comprises u-GaN / Al1-yGayN super-lattice, wherein y is more than 0 and less than 1; the second sub layer comprises an InxGa1-xN layer, an SiN layer and an AlaInbGa1-a-bN layer arranged sequentially on the first sub layer; or the second layer comprises N periodical structures formed by the InxGa1-xN layer and the AlaInbGa1-a-bN layer and M SiN layers arranged between the InxGa1-xN layer and the AlaInbGa1-a-bN layer; only one SiN layer is arranged between the InxGa1-xN layer and the AlaInbGa1-a-bN layer arranged adjacently, N is an integer which is equal to or greater than 2, M is an integer which is equal to or greater than 1 and equal to or less than 2N-1, X is more than 0 and less than 1, a is more than 0 and less than 1, and (a+b) is more than 0 and less than 1.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a highly influential new product in the emerging industry of information optoelectronics. LED has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens, Signal lights, backlights, toys and other fields. Generally, LEDs are mainly composed of brackets, silver glue, chips, gold wires and epoxy resin. Among them, the chip is the core component of the LED, which is processed by epitaxial wafers through multiple processes. Therefore, the structure of the epitaxial wafer determines the quality of the LED. [0003] The traditional GaN-based LED epitaxial wafer is mainly composed of N (Negative, negatively charged) type layer, InGaN / GaN active area, P (Positive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/08
Inventor 夏立军韩杰胡加辉魏世祯
Owner HC SEMITEK SUZHOU
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