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A light-emitting diode epitaxial wafer

A technology of light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as the reduction of hole injection efficiency, and achieve the effect of weakening the internal polarized electric field, increasing the light-emitting area, and improving the light-emitting efficiency.

Active Publication Date: 2018-02-09
HC SEMITEK SUZHOU
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Problems solved by technology

[0006] In order to solve the problem in the prior art that the high band gap caused by the electron blocking layer and the lower hole injection efficiency caused by the lattice difference, the embodiment of the present invention provides a light-emitting diode epitaxial wafer

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  • A light-emitting diode epitaxial wafer
  • A light-emitting diode epitaxial wafer

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Embodiment

[0027] An embodiment of the present invention provides an LED epitaxial wafer, see figure 1 , the epitaxial wafer includes a substrate 10, a first semiconductor layer 20, an active layer 30, an electron blocking layer 40, and a second semiconductor layer 50 sequentially formed on the substrate 10, and the first semiconductor layer 20 includes an N-type GaN layer ( That is, an N-type layer), and the second semiconductor layer 50 includes a P-type GaN layer (that is, a P-type layer).

[0028] The electron blocking layer 40 includes a first sublayer 41 formed on the active layer 30 and a P-type doped second sublayer 42 formed on the first sublayer 41 .

[0029] The first sublayer 41 includes a u-GaN layer and an Al layer sequentially disposed on the active layer 30 1-y Ga y N layer; alternatively, the first sublayer 41 includes u-GaN / Al 1-y Ga y N superlattice, 0

[0030] The second sublayer 42 includes In sequentially disposed on the first sublayer 41 x Ga 1-x N laye...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer, which belongs to the technical field of light-emitting diodes. The epitaxial wafer includes a substrate, a first semiconductor layer sequentially formed on the substrate, an active layer, an electron blocking layer, and a second semiconductor layer. The barrier layer includes a first sublayer formed on the active layer and a P-type doped second sublayer formed on the first sublayer; the first sublayer includes u-GaN layers sequentially arranged on the active layer and Al1‑yGayN layers; alternatively, the first sublayer comprises a u‑GaN / Al1‑yGayN superlattice, 0

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial wafer. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a very influential new product in the emerging industry of information optoelectronics. LED has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens, Signal lights, backlights, toys and other fields. Generally, LEDs are mainly composed of brackets, silver glue, chips, gold wires and epoxy resin. Among them, the chip is the core component of the LED, which is processed by epitaxial wafers through multiple processes. Therefore, the structure of the epitaxial wafer determines the quality of the LED. [0003] The traditional GaN-based LED epitaxial wafer is mainly composed of N (Negative, negatively charged) type layer, InGaN / GaN active region, P (Positive...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/08
Inventor 夏立军韩杰胡加辉魏世祯
Owner HC SEMITEK SUZHOU
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