Preparation method of P-type transparent and conductive cobalt oxide metal nano-composite film
A technology of cobalt oxide and metal nanometers, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of preparation process stability and repeatability improvement, electrical conductivity is far different, and achieve crystallization The effect of good quality, high photoelectric quality factor, and high sample repetition rate
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Embodiment 1
[0026] Embodiment 1, p-type transparent conductive Bi 2 Sr 2 co 2 o 8 / Au composite film preparation
[0027] The preparation method step of this composite film comprises:
[0028] A. Bi with a purity of 99.99% 2 o 3 , SrCO 3 、Co 3 o 4 The powder is weighed according to the atomic ratio in the chemical formula, mixed evenly and placed in a resistance furnace at 750-850°C for pre-sintering for 8-12 hours, then the powder is fully ground and pressed into tablets, and sintered at a temperature of 860-880°C for 38- For 42 hours, the Bi used for deposition was obtained 2 Sr 2 co 2 o 8 target;
[0029] B. At Bi 2 Sr 2 co 2 o 8 A fan-shaped Au sheet with a central angle of 45° is pasted on the target. The radius of the fan-shaped Au sheet is equal to the radius of the ceramic target to make a composite target. The composite target is placed in the PLD cavity and deposited on the single crystal substrate by pulse laser deposition technology. Growth c-axis oriented Bi...
Embodiment 2
[0033] Embodiment two, p-type transparent conductive Na x CoO 2 / Ag composite film preparation
[0034] The preparation method step of this composite film comprises:
[0035] A. Use Co with a purity of 99.99% 3 o 4 After the powder is evenly ground, it is pressed into shape by static pressure, pre-sintered in a resistance furnace at 650-750°C for 6 hours, then taken out and left to stand at room temperature, and then placed in a resistance furnace for sintering. Repeat this sintering for 2-3 times to produce The Co used for deposition 3 o 4 target;
[0036] B. In Co 3 o 4 A fan-shaped Ag flake with a central angle of 60° is pasted on the target. The radius of the fan-shaped Ag flake is equal to the radius of the ceramic target to make a composite target. The composite target is placed in the PLD cavity and deposited on the single crystal substrate by pulse laser deposition technology growing c-axis oriented composite prefabricated films;
[0037] C. Annealing in sodi...
Embodiment 3
[0039] Embodiment 3, p-type transparent conductive Ca 3 co 4 o 9 / Au composite film preparation
[0040] The preparation method step of this composite film comprises:
[0041] A, the high-purity CaCO 3 、Co 3 o 4 Weigh according to the molar ratio of calcium to cobalt 3:4, and after mixing, grinding, and tablet molding, pre-sinter in a resistance furnace at 850-950°C for 8-12 hours, then take it out and let it stand at room temperature, and then put it in Sintering in a resistance furnace, repeating the sintering 2-3 times in this way, to obtain the Ca used for deposition 3 co 4 o 9 target;
[0042] B. At Ca 3 co 4 o 9 A fan-shaped Au flake with a central angle of 40° is pasted on the target. The radius of the fan-shaped Au flake is equal to the radius of the ceramic target to make a composite target. The composite target is placed in the PLD cavity and deposited on the single crystal substrate by pulse laser deposition technology. grow c-axis oriented Ca 3 co 4 ...
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