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Preparation method of P-type transparent and conductive cobalt oxide metal nano-composite film

A technology of cobalt oxide and metal nanometers, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of preparation process stability and repeatability improvement, electrical conductivity is far different, and achieve crystallization The effect of good quality, high photoelectric quality factor, and high sample repetition rate

Active Publication Date: 2015-06-24
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although p-type TCO materials can be prepared through a certain process in systems such as ZnO, their conductivity is far from that of n-type TCO, and the stability and repeatability of the preparation process need to be greatly improved.

Method used

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  • Preparation method of P-type transparent and conductive cobalt oxide metal nano-composite film
  • Preparation method of P-type transparent and conductive cobalt oxide metal nano-composite film
  • Preparation method of P-type transparent and conductive cobalt oxide metal nano-composite film

Examples

Experimental program
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Embodiment 1

[0026] Embodiment 1, p-type transparent conductive Bi 2 Sr 2 co 2 o 8 / Au composite film preparation

[0027] The preparation method step of this composite film comprises:

[0028] A. Bi with a purity of 99.99% 2 o 3 , SrCO 3 、Co 3 o 4 The powder is weighed according to the atomic ratio in the chemical formula, mixed evenly and placed in a resistance furnace at 750-850°C for pre-sintering for 8-12 hours, then the powder is fully ground and pressed into tablets, and sintered at a temperature of 860-880°C for 38- For 42 hours, the Bi used for deposition was obtained 2 Sr 2 co 2 o 8 target;

[0029] B. At Bi 2 Sr 2 co 2 o 8 A fan-shaped Au sheet with a central angle of 45° is pasted on the target. The radius of the fan-shaped Au sheet is equal to the radius of the ceramic target to make a composite target. The composite target is placed in the PLD cavity and deposited on the single crystal substrate by pulse laser deposition technology. Growth c-axis oriented Bi...

Embodiment 2

[0033] Embodiment two, p-type transparent conductive Na x CoO 2 / Ag composite film preparation

[0034] The preparation method step of this composite film comprises:

[0035] A. Use Co with a purity of 99.99% 3 o 4 After the powder is evenly ground, it is pressed into shape by static pressure, pre-sintered in a resistance furnace at 650-750°C for 6 hours, then taken out and left to stand at room temperature, and then placed in a resistance furnace for sintering. Repeat this sintering for 2-3 times to produce The Co used for deposition 3 o 4 target;

[0036] B. In Co 3 o 4 A fan-shaped Ag flake with a central angle of 60° is pasted on the target. The radius of the fan-shaped Ag flake is equal to the radius of the ceramic target to make a composite target. The composite target is placed in the PLD cavity and deposited on the single crystal substrate by pulse laser deposition technology growing c-axis oriented composite prefabricated films;

[0037] C. Annealing in sodi...

Embodiment 3

[0039] Embodiment 3, p-type transparent conductive Ca 3 co 4 o 9 / Au composite film preparation

[0040] The preparation method step of this composite film comprises:

[0041] A, the high-purity CaCO 3 、Co 3 o 4 Weigh according to the molar ratio of calcium to cobalt 3:4, and after mixing, grinding, and tablet molding, pre-sinter in a resistance furnace at 850-950°C for 8-12 hours, then take it out and let it stand at room temperature, and then put it in Sintering in a resistance furnace, repeating the sintering 2-3 times in this way, to obtain the Ca used for deposition 3 co 4 o 9 target;

[0042] B. At Ca 3 co 4 o 9 A fan-shaped Au flake with a central angle of 40° is pasted on the target. The radius of the fan-shaped Au flake is equal to the radius of the ceramic target to make a composite target. The composite target is placed in the PLD cavity and deposited on the single crystal substrate by pulse laser deposition technology. grow c-axis oriented Ca 3 co 4 ...

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Abstract

The invention discloses a preparation method of a P-type transparent and conductive cobalt oxide metal nano-composite film, and belongs to the technical field of functional film materials. The method comprises the steps of A, preparing a ceramic target, B, performing pulsed laser deposition (PLD) on a film and C, performing annealing treatment, wherein in the step A, a cobalt oxide ceramic target is sintered by using a high-temperature solid phase reaction method; in the step B, a fan-shaped metal sheet is attached to the cobalt oxide ceramic target and prepared into a composite target, the composite target is placed in a pulsed laser deposition cavity, and a c-axis orientated cobalt oxide metal nano-composite prefabricated film grows on a single-crystal substrate through a pulsed laser deposition technology; and in the step C, the c-axis orientated transparent and conductive cobalt oxide metal nano-composite film is obtained. The P-type transparent and conductive cobalt oxide metal nano-composite film prepared in this way is good in crystallization quality, undergoes oriented growth along the c-axis direction, is free from impure phases, and has higher conductivity and visible light transmittance and high photoelectric quality factor.

Description

technical field [0001] The invention belongs to the technical field of functional film materials, and relates to a preparation method of a novel p-type transparent conductive oxide film, in particular to a preparation method of a p-type transparent conductive cobalt oxide metal nanocomposite film. Background technique [0002] From flat-panel liquid crystal displays, thin-film transistor manufacturing, transparent electrodes of solar cells, and defrosting of glass for trains and planes to building curtain wall glass, transparent conductive oxide films are widely used. Current research mainly focuses on ZnO, In 2 o 3 , SnO 2 and its doping system SnO 2 : Sb, SnO 2 : F, In 2 o 3 :Sn(ITO), ZnO:A1(AZO), etc., but these materials are all n-type TCO materials. Although p-type TCO materials can be prepared through a certain process in systems such as ZnO, their conductivity is far from that of n-type TCO, and the stability and repeatability of the preparation process need to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/28
Inventor 王淑芳孙丽卿闫国英傅广生李晓苇
Owner HEBEI UNIVERSITY