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Resin film for semiconductor device, and method for producing semiconductor device

A resin film and semiconductor technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, film/sheet-shaped adhesives, etc., can solve the problems of insufficient ion capture and achieve excellent heat resistance

Active Publication Date: 2015-07-01
NITTO DENKO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in the manufacture of semiconductor devices, there is a problem that the above-mentioned additives may be thermally decomposed due to various heating processes, and there is a problem that sufficient ion-capturing properties may not be exhibited.

Method used

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  • Resin film for semiconductor device, and method for producing semiconductor device
  • Resin film for semiconductor device, and method for producing semiconductor device
  • Resin film for semiconductor device, and method for producing semiconductor device

Examples

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Embodiment

[0155] Hereinafter, suitable examples of this invention will be described in detail as examples. However, it is not intended that the gist of the invention be limited to these examples unless there is any particular limitation on the materials, compounding amounts, and the like described in the examples.

[0156] Components used in Examples will be described.

[0157] Acrylic copolymer: TEISAN RESIN SG-P3 manufactured by Nagase ChemteX Corporation (weight average molecular weight: 850,000, glass transition temperature: 12°C)

[0158] Phenolic resin: MEH-7851SS manufactured by Meiwa Kasei Co., Ltd. (phenolic resin having a biphenyl aralkyl skeleton, softening point 67° C., hydroxyl equivalent 203 g / eq.)

[0159] Epoxy resin: YDCN-700-2 (o-cresol novolak type epoxy resin, epoxy equivalent 200, softening point 61°C) manufactured by Nippon Steel Chemical Co., Ltd.

[0160] Inorganic filler: SO-E2 (fused spherical silica, average particle diameter 0.5 μm) manufactured by Admatech...

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Abstract

The invention relates to a RESIN FILM FOR SEMICONDUCTOR DEVICE, of which the proportion of the copper ion capture rate A before thermal-curing to the copper ion capture rate B after the thermal-curing is more than 1, and relates to the producing method of the semiconductor.

Description

technical field [0001] The present invention relates to a resin film for a semiconductor device and a method for manufacturing a semiconductor device. Background technique [0002] Conventionally, in semiconductor devices, it has been known that metal ions (for example, copper ions) are sometimes generated from wiring (for example, copper wiring) formed on a substrate and a lead (for example, copper lead) electrically connecting the substrate and a semiconductor chip, cause malfunction. [0003] Therefore, studies have been conducted in recent years to prevent malfunction of semiconductor devices by adding additives that capture metal ions to resins for bonding semiconductor chips to substrates such as lead frames (for example, see Patent Document 1). [0004] prior art literature [0005] patent documents [0006] Patent Document 1: Japanese Patent Laid-Open No. 2005-333085 Contents of the invention [0007] The problem to be solved by the invention [0008] How...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J7/00C09J11/04H01L21/56
CPCH01L24/27H01L24/83H01L2224/48091H01L2924/181H01L2224/32225H01L2224/48227H01L2224/73265H01L2224/45144H01L2224/45147H01L2224/45124H01L2924/00014H01L2924/00012H01L2924/00
Inventor 木村雄大三隅贞仁大西谦司宍户雄一郎菅生悠树
Owner NITTO DENKO CORP