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A three-dimensional electrode structure of a semiconductor device and its preparation method and application

A three-dimensional electrode and semiconductor technology, applied in the field of photoelectric detection, can solve the problems of long carrier collection time, poor electric field uniformity, and small effective detection area, so as to improve response time and sensitivity, avoid complexity, and improve The effect of radiation resistance

Active Publication Date: 2017-01-25
西安德盟特半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a three-dimensional electrode structure of a semiconductor device to solve the problem of small effective detection area, long carrier collection time and low collection efficiency when using a vertical sandwich electrode structure, and electric field uniformity when using a coplanar interdigitated electrode structure bad question

Method used

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  • A three-dimensional electrode structure of a semiconductor device and its preparation method and application
  • A three-dimensional electrode structure of a semiconductor device and its preparation method and application
  • A three-dimensional electrode structure of a semiconductor device and its preparation method and application

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Embodiment 1

[0048] like figure 1 , a three-dimensional electrode structure of a semiconductor device, a single crystal diamond substrate 5 with a single crystal diamond epitaxial growth film 6 grown in a rectangular shape is used as a material, and two metal electrodes pad1 of a positive pole and a negative pole are arranged on the surface of the epitaxial film. The metal electrodes pad1 are connected to two interdigital electrodes 2 arranged vertically at equidistant intervals, and each interdigital electrode 2 is connected to a plurality of columnar metal electrodes 3 parallel to each other and arranged in a single crystal diamond wafer. The interdigitated electrodes 2 are straight parallel electrodes, and the columnar metal electrodes are arranged vertically.

Embodiment 2

[0050] like figure 2 , a three-dimensional electrode structure of a semiconductor device, using a rectangular self-supporting single-crystal diamond film 4 as a single-crystal diamond wafer material, on the same surface of the self-supporting single-crystal diamond film 4, two metal electrodes pad1 respectively serving as positive and negative electrodes are arranged Each of the two metal electrodes pad1 is connected to a plurality of interdigital electrodes 2 arranged at equal intervals, and each interdigital electrode 2 is connected to a plurality of columnar metal electrodes 3 parallel to each other and arranged in a single crystal diamond wafer. The interdigitated electrodes 2 are straight parallel electrodes, and the columnar metal electrodes are arranged vertically.

Embodiment 3

[0052] like image 3 , a three-dimensional electrode structure of a semiconductor device, using a single crystal diamond substrate 5 grown with a single crystal diamond epitaxial growth film 6 as a material, a positive electrode and a negative electrode metal electrode pad1 are arranged on different surfaces of the upper surface and the lower surface of the epitaxial film, two Each metal electrode pad1 is connected to two interdigital electrodes 2 arranged at equal intervals, and each interdigital electrode 2 is connected to a plurality of columnar metal electrodes 3 parallel to each other and arranged in a single crystal diamond wafer.

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Abstract

A three-dimensional electrode structure of a semiconductor device, comprising a monocrystalline diamond wafer material. The monocrystalline diamond wafer material is provided with two metal electrode pads (1) respectively used as a positive electrode and a negative electrode. Each metal electrode pad (1) is connected to one or more interdigital electrodes (2) provided at equal intervals; and each interdigital electrode (2) is connected to one or more bar-shaped metal electrodes (3). The one or more bar-shaped metal electrodes (3) are mutually parallel and provided in the monocrystalline diamond wafer material. Also disclosed are a manufacturing method and application of the three-dimensional electrode structure of the semiconductor device. By combining advantages of a flat electrode structure and a vertical electrode structure, a body electrode is introduced into the monocrystalline diamond wafer to collect an electron-hole pair excited by ultraviolet light or a particle beam efficiently and quickly, thus improving a response time and sensitivity of a detector, while avoiding a complex monocrystalline diamond wafer surface, improving a stability of the device, and improving anti-radiation performance of a particle detector.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and relates to a three-dimensional electrode structure of a semiconductor device and a preparation method and application thereof. Background technique [0002] Ultraviolet photoelectric detection technology is a very important technology, which can be widely used in space flame detection, smoke alarm, space communication and other fields. Due to the complex and harsh working environment, the material requirements for the detector are very high. As a wide-bandgap semiconductor, diamond has a cut-off wavelength of 225 nanometers and has natural visible light filtering properties, so it is very suitable for the preparation of solar-blind ultraviolet detectors. At the same time, diamond has many excellent properties, such as high thermal conductivity, good thermal stability, good chemical stability, and good radiation resistance. All of these make diamond have great advantages in t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/0224H01L31/09H01L31/18Y02P70/50
Inventor 王宏兴刘璋成王玮李奉南张景文卜忍安侯洵
Owner 西安德盟特半导体科技有限公司