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Preparation method of graphene transparent conductive film

A transparent conductive film, graphene film technology, applied in cable/conductor manufacturing, circuits, electrical components, etc., can solve problems such as difficult breakthroughs in technology, large nickel or copper substrates, and increased costs, and achieve the effect of reducing costs.

Active Publication Date: 2017-03-15
于化丛
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, after expanding to a certain area, the nickel or copper substrate will become larger and the cost will increase; especially in the film layer transfer problem with a larger area, it is difficult to break through the technology

Method used

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  • Preparation method of graphene transparent conductive film
  • Preparation method of graphene transparent conductive film
  • Preparation method of graphene transparent conductive film

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Experimental program
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Embodiment 1

[0023] The preparation method of the graphene transparent conductive film of the present embodiment comprises the following steps:

[0024] ① On a large-area glass substrate 101, a nickel film layer 102 with a thickness of about one to two nickel atoms is deposited by magnetron sputtering, such as figure 1 shown. The magnetron sputtering method is specifically: Ar is introduced into the vacuum chamber, and the gas discharge excited by DC or radio frequency or intermediate frequency power supply forms Ar + , Ar + Under the action of a high-voltage electric field, bombard the nickel target, strip the nickel atoms from the target surface, and sputter onto the glass substrate to form a thin film; the process conditions of the magnetron sputtering method are: background vacuum degree: 9*10 -4 -1*10 -4 Pa, sputtering pressure: 0.1-2Pa, substrate temperature: room temperature-200°C.

[0025] 2. On the nickel thin film layer 102, adopt the chemical vapor deposition method to depos...

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PUM

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Abstract

The invention discloses a method for preparing a graphene transparent conductive film, which comprises the following steps: ① Depositing a nickel film with a thickness of about one to two nickel atoms on a large-area glass substrate by magnetron sputtering; ② depositing a nickel film on a large-area glass substrate On the layer, the graphene film layer is deposited by chemical vapor deposition method; ③After the cooling process, nickel atoms are separated through the graphene film layer and attached to the surface of the graphene film layer; ④The graphite is cleaned by a weak acid cleaning process. The nickel layer on the surface of the vinyl film layer is removed, and then dried to obtain a transparent conductive film. The invention breaks through the limitations of the original technology, and realizes the leap from the small size of the graphene transparent conductive film in the laboratory to the large-scale application of industrial applications; in large-area applications, it will be able to replace the current conventional photovoltaic transparent conductive film Indium tin oxide transparent conductive film for film and touch screen industry, and can reduce cost due to large-scale production.

Description

technical field [0001] The invention relates to a preparation method of a graphene transparent conductive film. Background technique [0002] Graphene materials have the characteristics of ultra-thin, super-strength, high specific surface area, high thermal conductivity, high transparency, super-carrier mobility, and flexibility, and have broad application prospects and potential. [0003] The conventional preparation process of graphene transparent conductive film is based on the growth of nickel or copper as the substrate, so it needs to be transferred to other substrates through lift-off and transfer technology. However, after expanding to a certain area, the nickel or copper substrate will become larger and the cost will increase; especially in the problem of film layer transfer with a larger area, it is difficult to break through the technology. Contents of the invention [0004] The purpose of the present invention is to provide a preparation method of graphene tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00
Inventor 来霸王奇于化丛
Owner 于化丛