Metal gate structure and manufacturing method thereof
A metal gate and metal gate technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of increasing the complexity of processing and manufacturing ICs
Active Publication Date: 2018-06-15
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
This scaling down also increases the complexity of handling and manufacturing ICs, and to achieve these advances, similar developments in IC processing and manufacturing are required
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[0044] In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, components and circuits have not been described in detail so as not to obscure the present invention. It should be understood that the following disclosure provides many different embodiments or examples to achieve different features of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting.
[0045] The making and using of the Examples are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in ...
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The present invention provides a semiconductor structure including a semiconductor layer having a first surface, and an interlayer dielectric (ILD) defining a metal gate over the first surface of the semiconductor layer. The metal gate includes a high-k dielectric layer, a barrier layer and a work function metal layer. The thickness of the first portion of the barrier layer at the sidewall of the metal gate is much smaller than the thickness of the barrier layer at the bottom of the metal gate. The present invention provides a method for fabricating a semiconductor structure. The method includes forming a metal gate trench in the ILD, forming a barrier layer at the bottom and sidewalls of the metal gate trench, removing a first portion of the barrier layer at the sidewalls of the metal gate trench, and forming an Conformal work function metal layer for the barrier layer.
Description
technical field [0001] The present invention relates to metal gates in semiconductor structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component (or line) that can be formed using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and reducing associated costs. This scaling down also increases the complexity of handling and manufacturing ICs, and similar developments in IC processing and manufacturing are required in order to achieve these advances. As transistor dimensions decrease, the thickness of the gate oxide must be reduced to maintain performance as the gate length decreases. However, to reduce gate leakage, a high dielectric constant (high-k) ga...
Claims
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IPC IPC(8): H01L29/423H01L29/49H01L21/28
CPCH01L21/28088H01L29/4966H01L29/66545H01L29/517H01L29/513H01L21/32134H01L21/32136H01L21/32139H01L21/31111H01L21/31116H01L21/31H01L21/326H01L23/52H01L29/772H01L21/3215
Inventor 何伟硕江宗育陈光鑫
Owner TAIWAN SEMICON MFG CO LTD