Strain Balanced Active Region Gradient Well Layer Semiconductor Laser Structure

Abstract

The invention belongs to the technical field of semiconductor optic electronics and particularly discloses a stain-balance active-area gradient potential well layer semiconductor laser structure. The structure comprises a buffer layer, a lower matching layer, a lower limiting layer, a lower transition layer, a lower waveguide layer, a multiple-quantum well layer, an upper waveguide layer, an upper transition layer, an upper limiting layer, an upper matching layer and an electrode contact layer which are in sequential epitaxial growth from top to bottom by adopting a metal-organic chemical vapor deposition method. Improvements are performed on lowering threshold current of a laser, increasing output power, improving photoelectric conversion efficiency, prolonging service life, improving reliability and the like to obtain the semiconductor laser with the novel structural material system on the basis of improving quality of a material mutation heterogeneous interface of the multiple-quantum well layer, lowering mismatching ratio of strain of lattice constant, reducing mismatching ratio of total accumulated strain of an active area of a quantum well and avoiding lattice relaxation occurring to the quantum well heterogeneous interface.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a semiconductor laser, in particular to a strain-balanced active region gradient potential well layer semiconductor laser structure. Background technique [0002] High-power semiconductor lasers have a very wide range of applications and market demands in the fields of pumping solid-state lasers and optical fiber lasers, medical fields and communication information fields. As the requirements for laser power become higher and higher, the problem of device reliability becomes more and more prominent. For high-power semiconductor lasers, the optical catastrophe damage on the cavity surface caused by high output optical power density and the temperature rise of the active region and cavity surface caused by various carrier recombination thermal effects become the limit of the maximum output optical power density, affecting A major factor in its reliability and...

AI Technical Summary

Problems solved by technology

But the disadvantages of this new type of semiconductor quantum well material: 1. The lattice matching problem of material growth, how to realize the coherent growth of high-quality strain compensation quantum well material; 2. Under the high In composition, the growth potential well layer quantum well material Afterwards, In is prone to segregation, resulting in a poor heterogeneous interface. How to grow a high-quality smooth and abrupt heterogeneous interface suitable for the laser field

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