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Gas sensor based on OEFT (Organic field-effect transistor) and preparation method thereof

A gas sensor and transistor technology, which is used in instruments, scientific instruments, measuring devices, etc., can solve the problems of failing to meet the application requirements of OFET gas sensors and difficult to accurately control the grain size.

Inactive Publication Date: 2015-07-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides an organic field effect transistor gas sensor and its preparation method aiming at the deficiencies of the prior art, which solves the problem that the grain size in the prior art is difficult to precisely control and cannot meet the application requirements of the OFET gas sensor

Method used

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  • Gas sensor based on OEFT (Organic field-effect transistor) and preparation method thereof
  • Gas sensor based on OEFT (Organic field-effect transistor) and preparation method thereof
  • Gas sensor based on OEFT (Organic field-effect transistor) and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen gas after cleaning; spin-coat shellac on the surface of transparent conductive cathode ITO: PMMA with a volume ratio of 10:90 grid insulating layer 100nm, and drying the formed film; evaporating 30 nm of pentacene organic semiconductor layer on the gate insulating layer; thermally evaporating 10 nm of gold source and drain electrodes on the organic semiconductor layer. The measured saturation current of the device (I SD )=70.33μA, threshold voltage (V TH )=-16V, large pentacene grains dominate, small grains are less, and there is no selectivity for oxidizing gas detection.

Embodiment 2

[0032] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen gas after cleaning; spin-coat shellac on the surface of transparent conductive cathode ITO: a gate insulating layer with a PS volume ratio of 15:85 is 200nm, and drying the formed film; 60 nm of phthalocyanine organic semiconductor layer was evaporated on the gate insulating layer; 50 nm of silver source and drain electrodes were thermally evaporated on the organic semiconductor layer. The measured saturation current of the device (I SD )=67.88μA, threshold voltage (V TH )=-16V, the phthalocyanine crystal grains are dominated by large grains, and there are few small grains, so there is no selectivity for the detection of oxidizing gases.

Embodiment 3

[0034] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen gas after cleaning; spin-coat shellac on the surface of transparent conductive cathode ITO: a gate insulating layer with a volume ratio of 20:80 of 300nm, and drying the formed film; evaporating 90nm of fullerene organic semiconductor layer on the gate insulating layer; thermally evaporating 80nm of copper source electrode and drain electrode on the organic semiconductor layer. The measured saturation current of the device (I SD )=65.19μA, threshold voltage (V TH )=-16V, there are more large grains of fullerene and less small grains. The selective detection contrast of nitrogen dioxide, sulfur dioxide and sulfur trioxide is poor.

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Abstract

The invention discloses a gas sensor based on an OEFT (Organic field-effect transistor) and a preparation method thereof, solves the problem that the conventional gas sensor based on OEFT is lower in gas detection selectivity, and belongs to the technical field of electronic components. The gas sensor structurally comprises a substrate, a gate electrode, a gate electrode insulating layer, an organic semiconductor layer, a source electrode and a leakage electrode all arranged from bottom to top in sequence, wherein the source electrode and the leakage electrode are arranged on the organic semiconductor layer. According to the invention, quantitative lac is introduced into the soluble gate electrode insulating layer to enable the interface of the gate electrode insulating layer to have different surface energy, so that organic semiconductor crystal grains with different sizes are generated through induction; the selective detection on oxidizing gases can be implemented, and the high-performance OEFT is obtained through the adjustment of the ratio of grain sizes.

Description

technical field [0001] An organic field effect transistor gas sensor and a preparation method thereof are used for precisely controlling the size of crystal grains in organic materials and improving the selectivity of the organic field effect transistor gas sensor, and belong to the technical field of electronic components. Background technique [0002] Field-effect transistors are one of the mainstream research directions in the field of optoelectronics and electronics technology. Because they can work under low current and low voltage conditions, they have been widely used in large-scale integrated circuits. In recent years, organic field-effect transistors (OFETs) based on organic semiconductor materials have attracted widespread attention due to their potential applications in large-area displays, organic integrated circuits, radio frequency identification technology and sensors. At present, organic field effect transistors have significantly improved the status quo in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
Inventor 于军胜施薇王煦郑毅帆
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA