Field effect transistor switching circuit

Abstract

Embodiments include an apparatus, system, and method related to a switching circuit. In some embodiments, the switching circuit may include first switch including an n-channel field effect transistor (FET) in the signal path. The switching circuit may further include a second switch in shunt to the first switch. The second switch may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.

Description

technical field [0001] Embodiments of the present disclosure relate generally to the field of circuits, and more particularly to switching circuits. Background technique [0002] Field-effect transistors (FETs) can be used in low-power radio-frequency (RF) switching devices, especially in mobile applications where price, performance, and power consumption are key factors. However, FETs can be challenged when handling larger signals. In particular, large signal performance in a FET acting as a switch can be affected by charge accumulation in the quasi-neutral region of the body of the FET. Charge accumulation can lead to hot carrier accumulation, excessive gate induced drain leakage (GIDL), negative transconductance, loss of gate control, hysteresis, etc. These problems may generally be referred to as floating body effects (FBE). [0003] In some applications, some applications may require ultra-fast and ultra-low loss / high isolation switches. In some cases, low-loss swit...

AI Technical Summary

Problems solved by technology

However, using NVG may result in slower switching, and a significant overhead in terms of circuit area

Also, using NVG can cause leakage current in sleep mode (i.e. when the circuit is not actively passing signals)

In some cases, DC blocking capacitors can be used in switches to prevent the above problems, however using DC blocking capacitors may result in high circuit area and also degrade circuit performance

For example, the circuit may experience poor insertion loss, poor linearity and / or poor isolation

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