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Method for preparing Gamma-CuI nanowire

A nanowire and -cui technology, which is applied in the field of preparation of γ-CuI nanowires, can solve the problems of CuI nanowires with discrete sizes and difficult to achieve precise control of specific surface area, and achieve the effect of good crystallinity and uniform size

Inactive Publication Date: 2015-08-19
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the size of the prepared CuI nanowires is discrete, and it is difficult to achieve precise control of the specific surface area, which will restrict the application of γ-CuI nanowires to precisely control the catalytic rate, improve the efficiency of solar cells, and improve the luminescence of light-emitting diodes.

Method used

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  • Method for preparing Gamma-CuI nanowire
  • Method for preparing Gamma-CuI nanowire
  • Method for preparing Gamma-CuI nanowire

Examples

Experimental program
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Effect test

Embodiment 1

[0031] AAO templates with a pore diameter of 400 nm, a wall thickness of 50 nm, and a thickness of 60 μm were selected. The cleaned AAO template was completely immersed in 1mol% CuI acetonitrile solution, and after ultrasonication for 10 min, the AAO template was taken out and placed in an oven at 65°C for pretreatment. Fix the pretreated AAO template on the bottom of the high-temperature and high-pressure sealed container. Weigh 10 g of CuI powder with a purity of 99.995%, place it on the AAO template, and then seal the high-temperature and high-pressure container. Use a vacuum mechanical pump to pump air to remove the air in the sealed chamber. When the vacuum degree is higher than 5Pa, close the pump valve and stop pumping. Put the high-temperature and high-pressure sealed container into the cylindrical heating furnace, start heating, set the heating rate at 1°C / min, and the final temperature is 610°C~680°C. After the temperature rises to 610°C~680°C and keeps warm for 10...

Embodiment 2

[0033] AAO templates with a pore diameter of 400 nm, a wall thickness of 50 nm, and a thickness of 60 μm were selected. The cleaned AAO template was completely immersed in 1mol% CuI acetonitrile solution, and after ultrasonication for 10 min, the AAO template was taken out and placed in an oven at 65°C for pretreatment. Fix the pretreated AAO template on the bottom of the high-temperature and high-pressure sealed container. Weigh 10g of CuI powder with a purity of 99.995% and 2mol% of ZnI 2After uniform mixing, place on the AAO template and seal the high-temperature and high-pressure container. Use a vacuum mechanical pump to pump air to remove the air in the sealed chamber. When the vacuum degree is higher than 5Pa, close the pump valve and stop pumping. Put the high-temperature and high-pressure sealed container into a cylindrical heating furnace, start heating, set the heating rate to 1°C / min, and the final temperature is 605-670°C. After the temperature rises to 605~670...

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Abstract

The invention belongs to the field of material preparation, discloses a method for preparing a gamma-CuI nanowire, uses porous anodic aluminum oxide (AAO) as a template, and adopts a vacuum melting hot-press approach. Processes of pretreatment of the AAO template, raw material doping, heating temperature of vacuum melting, a temperature rise process, an air pressure value, a temperature fall process and AAO template dissolution are optimized, and a gamma-CuI nanowire which is consistent in size, continuous and compact is obtained. Accurate regulation and control of the size of the nanowire can be realized through selection of different AAO templates. The prepared p type semiconductor gamma-CuI nanowire can be applied to the fields of organic chemical catalysis, solar cells, light-emitting diodes and the like. The preparation method is simple in technology, and low in cost.

Description

technical field [0001] The invention relates to a preparation method of γ-CuI nanowires, which uses porous anodic aluminum oxide (Anodic Aluminum Oxide, AAO) as a template, and prepares p-type semiconductor copper iodide (chemical formula: γ-CuI ) nanowire method, the prepared nanowire has the characteristics of dense continuous, uniform size (diameter and length) and can be precisely regulated. Background technique [0002] γ-CuI is a kind of Ⅰ-Ⅶ p-type semiconductor, because of its wide bandgap (3.11 eV), high exciton binding energy (62 meV), ultrafast decay time, fast ion conduction, etc., it has become more and more popular. received people's attention. In addition to the characteristics of bulk materials, the one-dimensional γ-CuI nanowires also have the characteristics of larger specific surface area, higher luminous efficiency, improved thermoelectric performance and enhanced electron / hole mobility, making γ-CuI nanowires Wire has more and more important application...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/26
CPCH01L33/26
Inventor 顾牡夏明孙寿强刘小林黄世明刘波倪晨
Owner TONGJI UNIV