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Depositing material into high aspect ratio structures

一种高深宽比、横截面积的技术，应用在形成纳米尺度结构领域，能够解决不能创建空隙、结构变形等问题

Active Publication Date: 2015-09-02
FEI CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To date, conventional techniques have not been able to locally fill gaps without creating voids in the filled structure or causing artifacts such as structural deformation or ion beam rolling shutter effects

Method used

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  • Depositing material into high aspect ratio structures
  • Depositing material into high aspect ratio structures
  • Depositing material into high aspect ratio structures

Examples

Experimental program
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Embodiment Construction

[0023] When forming a cross-section of a region of a sample containing high aspect ratio pores, artifacts in the cross-section arise from voids formed when the pores are filled in conventional methods. By filling high aspect ratio holes without creating voids, artifacts are not created in cross-sectional and reliable failure analysis results. Filling holes is also useful in some applications to create useful structures.

[0024] Difficulties exist in filling high aspect ratio holes or trenches using conventional charged particle beam techniques. In beam-induced deposition, charged particles or photons induce precursor gas molecules (such as organometallic molecules like tungsten hexacarbonyl (WCO 6 ) or the decomposition of platinum (Pt) precursors). The precursor is typically in the form of a gas that is directed towards the workpiece surface through a gas injection nozzle. In some embodiments, the entire workpiece is in a cell filled with precursor gas, or portions of the...

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Abstract

A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.

Description

technical field [0001] The present invention relates to forming nanoscale structures, and in particular to filling high aspect ratio structures using beam induced deposition. Background technique [0002] The structures forming integrated circuits and other nanotechnology have dimensions on the nanometer scale. Many procedures that are useful for structures on the larger scale are not suitable for processing structures on the nanoscale. One method of viewing structures for process development, process control, and defect analysis is to expose portions of the structure using a focused ion beam, and to observe the exposed structure using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). When the ion beam abrades material to expose structures for observation, the ion beam can deform the structures and create artifacts that interfere with the observation. [0003] A high aspect ratio (HAR) structure is a structure whose height is much greater th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCH01L21/02636C23C16/047H01L21/0243H01L21/76898C23C16/045H01L21/76879H01L21/0262G01N1/286G01N1/32H01L21/2605H01L21/02115H01L21/02277H01L21/28556
Inventor S.H.李J.布莱克伍德S.斯通
Owner FEI CO