One-time programming in reprogrammable memory
A technology for storage elements and storage devices, applied in the direction of static memory, read-only memory, digital memory information, etc., can solve the problem of large silicon area consumed by OTP storage devices, storage device design time and chip size consumption, and reprogrammable storage devices cannot Easily investigate or read issues such as
Inactive Publication Date: 2019-01-29
NXP BV
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Replication of memory devices can be very costly in terms of design time and die size
Furthermore, OTP memory devices consume relatively large silicon area compared to some types of reprogrammable memory devices
Furthermore, OTP memory devices are susceptible to hardware investigation and unauthorized bit recovery (e.g., using an electron microscope), while at least some types of reprogrammable memory devices cannot be easily investigated or read
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0015] It will be readily appreciated that portions of the embodiments generally described herein and illustrated in the drawings may be arranged and designed in many different configurations. Accordingly, the following more detailed description of the various embodiments is not intended to limit the scope of the present disclosure, but merely exemplifies the various embodiments, as illustrated. While various aspects of the embodiments are shown in the drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
[0016] The present invention may be embodied in other specific forms without departing from the spirit and essential characteristics of the present invention. The described embodiments are to be considered in all respects as illustrative and not restrictive. The scope of the invention is therefore indicated by the appended claims rather than by this detailed description. All changes that come within the meaning and range of equivalency o...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
Permanent data storage is achieved using a portion of a reprogrammable memory device. A memory device includes a plurality of electrically erasable memory elements and a controller. A plurality of electrically erasable storage elements are configured to store data. Each storage element can be programmed for a number of write cycles before reaching a write fail state. A controller is coupled to the plurality of storage elements. The controller includes a receiver and a write engine. The receiver is configured to receive instructions for driving the selected storage element to a write fault state. The write engine repeatedly writes the data value to the selected storage element in a plurality of write operations until a write fault condition for the selected storage element is established.
Description
Background technique [0001] Electronic storage devices may generally be classified as one-time programmable (OTP) storage devices or reprogrammable storage devices. There is another type of specialized memory known as Multiple Time Programmable (MTP) memory, which involves changes to the wafer production process. [0002] OTP memory devices have memory elements accompanied by fuses and antifuses. Once a data value is programmed into the OTP storage element, a fuse is blown to create a permanently open circuit, or an anti-fuse is programmed to create a permanently closed circuit. This prevents the OTP storage elements from being reprogrammed to store different data values. OTP storage elements hold written data values indefinitely, or as long as the stored state can be physically maintained by the storage element (data retention can be limited by electron drift through insulators such as floating gate transistors middle). [0003] Reprogrammable storage devices allow indi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
CPCG11C7/1045G11C11/005G11C13/0035G11C13/0059G11C13/0069G11C16/22G11C17/165G11C2013/0083G06F3/0619G06F3/0652G06F3/0679G06F2206/1014
Inventor 马克·沃克莱尔菲利普·特温
Owner NXP BV