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Fabrication method of two-dimensional grating dual-wavelength dfb laser

A DFB laser, two-dimensional grating technology, which is applied to the device for controlling the output parameters of the laser, the structure of the optical resonator, the structure of the active area, etc. problems, to achieve the effect of suppressing the phenomenon of mold adjustment, improving work stability and yield

Active Publication Date: 2018-10-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods mainly use multiple material epitaxial growth, multiple grating fabrication or use expensive electron beam exposure equipment. On the one hand, the cost of the device is increased. On the other hand, the manufacturing process of the device is complicated, resulting in a decrease in yield.
Another method with a relatively simple manufacturing process is to achieve lasing at different wavelengths by changing the width of the waveguides of the two DFB lasers. However, this method has very strict requirements on the waveguide lithography and etching process, making it difficult to manufacture the device.

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  • Fabrication method of two-dimensional grating dual-wavelength dfb laser
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  • Fabrication method of two-dimensional grating dual-wavelength dfb laser

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Embodiment

[0025] Please refer to Fig. 1, the present invention provides a manufacturing method of a two-dimensional grating dual-wavelength DFB laser, comprising the following steps:

[0026] Step 1: growing buffer layer 2 , lower separate confinement layer 3 , multiple quantum wells 4 and upper separate confinement layer 5 on substrate 1 . The material of the substrate 1 is InP, GaAs or GaN;

[0027] Step 2: Spin-coat photoresist for holographic exposure on the upper limiting layer 5 on the surface of the wafer, and dry it;

[0028] Step 3: Adjust the interference fringe period Λ for proper holographic exposure 1 , expose the photoresist spin-coated on the wafer, and the interference fringes are along the X direction ( figure 2 );

[0029] Step 4: Again adjust the interference fringe period Λ for proper holographic exposure 2 , the second holographic exposure is carried out to the photoresist spin-coated on the wafer in the vertical direction with the holographic exposure in step ...

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Abstract

The invention discloses a manufacturing method of a two-dimensional grating dual-wavelength DFB laser device. The manufacturing method comprises the steps of: step 1, growing a buffer layer, a lower separate confinement layer, multiple quantum wells and an upper separate confinement layer in an epitaxial way; step 2, coating a photoresist on the upper separate confinement layer in a throwing manner; step 3, adjusting a period of interference fringes for holographic exposure, and carrying out first holographic exposure; step 4, adjusting the period of the interference fringes for holographic exposure, and carrying out second holographic exposure in a direction vertical to that of the last holographic exposure; step 5, developing, and etching grating morphology; step 6, corroding part of the multiple quantum wells and the upper separate confinement layer; step 7, growing a wrapping layer and a contact layer on the upper separate confinement layer in an active area and the lower separate confinement layer in a passive area in a throwing manner; step 8, etching active waveguide structures on the contact layer of the active area, and etching passive waveguide structures on the contact layer of the passive area; and step 9, manufacturing an electrode on the waveguides of the active area, thinning the substrate, manufacturing a back electrode, and finishing manufacture.

Description

technical field [0001] The invention belongs to the field of optoelectronic devices, and in particular relates to a method for manufacturing a two-dimensional grating dual-wavelength DFB laser. Background technique [0002] Dual-wavelength lasers have attracted extensive attention in all-optical clock recovery and optical-borne microwave sources. Such devices are currently mainly divided into three categories: common cavity type, serial type and parallel type. Among them, the common cavity and serial type have the advantage of compact structure, but because the lasing light of one optical cavity will affect the other optical cavity, resulting in uneven dual-wavelength optical cavity and unstable operation of the device. The parallel type is to use two DFB lasers with different lasing wavelengths to achieve dual-wavelength output through an optical combiner. Compared with common cavity and serial type, crosstalk between two DFB laser cavities can be well avoided, and it has...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12H01S5/34H01S5/06
Inventor 韩良顺梁松许俊杰乔丽君朱洪亮
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI