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Method for preparing monatomic silicon with electrolytic deposition in ionic liquid

A technology of ionic liquid and elemental silicon, applied in the field of electrolysis, can solve problems such as stagnation, small product volume, and difficulty in industrialization

Inactive Publication Date: 2015-09-23
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The current research results show that no matter in the organic electrolyte or the mixed system of organic liquid and ionic liquid, the obtained silicon product still stays on the micron-scale film, the product volume is small, and it is difficult to industrialize

Method used

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  • Method for preparing monatomic silicon with electrolytic deposition in ionic liquid
  • Method for preparing monatomic silicon with electrolytic deposition in ionic liquid
  • Method for preparing monatomic silicon with electrolytic deposition in ionic liquid

Examples

Experimental program
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Effect test

Embodiment 1

[0020] SiCl 4 Dissolved in N4441 (tributylmethylammonium bistrifluoromethanesulfonimide) ionic liquid, the active material concentration is 0.1M, the working electrode is a copper sheet, the auxiliary electrode is a glassy carbon electrode, and the reference electrode is Ag / (AgNO 3 acetonitrile). Constant voltage electrodeposition, the working voltage is -2.4V, the temperature is 50°C, after 4 hours of electrodeposition, the product silicon is obtained on the working electrode. After the working electrode is taken out, it is washed with dichloromethane for several times to ensure that the ionic liquid is cleaned. The final product obtained was placed in a vacuum oven at 60° C. for 12 hours, and the thickness of the obtained electrodeposited layer was about 0.01 mm.

Embodiment 2

[0022] SiBr 4 Dissolved in [EMIM]TFSI (1-ethyl-3-methylimidazolium bistrifluoromethanesulfonimide) ionic liquid, the active material concentration is 0.2M, the working electrode is a stainless steel sheet, and the auxiliary electrode is a glassy carbon electrode. The reference electrode is Ag / (AgNO 3 acetonitrile). Constant current electrodeposition, the working current density is 0.1A / dm 2 , the temperature is 50°C, and the product silicon is obtained by electrodeposition on the working electrode for 8 hours. After the working electrode is taken out, it is washed with ethanol + acetone for several times to ensure that the ionic liquid is cleaned. The final product obtained was placed in a vacuum oven at 60° C. for 12 hours, and the thickness of the obtained electrodeposition layer was about 0.02 mm.

Embodiment 3

[0024] SiHCl 3 Dissolved in N4441 (tributylmethylammonium bistrifluoromethanesulfonimide) ionic liquid, the active material concentration is 0.3M, the working electrode is a titanium sheet, the auxiliary electrode is a glassy carbon electrode, and the reference electrode is Ag / (AgNO 3 acetonitrile). Constant voltage electrodeposition, the working voltage is -2.6V, the temperature is 50°C, after 4 hours of electrodeposition on the working electrode to obtain the product silicon, after the working electrode is taken out, it is washed with acetone for several times to ensure that the ionic liquid is cleaned. The final product was placed in a vacuum oven at 60° C. for 12 hours, and the thickness of the electrodeposited layer was about 0.02 mm.

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Abstract

The invention discloses a method for preparing monatomic silicon with electrolytic deposition in ionic liquid with an aim to achieve the purpose to have silicon deposited electrically at one step with substances of SiCl4 and the like under the action of direct current by taking the ionic liquid as media. The method is characterized in that one or two mixed systems in the ionic liquid of imidazoles, pyridines, piperidines, quaternary ammoniums and quaternary phosphoniums are taken as the media, the SiCl4 or metal silicate are dissolved in the ionic liquid systems, electrodeposition temperature ranges from 50DEG C to 200DEG C, and the monatomic silicon is deposited on a solid metal cathode. The method has the advantages that the operation temperature is low, the ionic liquid systems are stable and the process sequence is simple and easy to operate; control through constant current and constant voltage is achieved, continuous production is easy to realize, current efficiency is high, and silicon production energy consumption and cost can be remarkably reduced. The method has quite good application prospect in preparation of semiconducting materials.

Description

technical field [0001] The invention belongs to the field of electrolysis and relates to a new method for preparing elemental silicon. Background technique [0002] Compared with other semiconductors, elemental silicon has comprehensive advantages such as high melting point, good thermal stability, wide bandgap, stable performance and environmental friendliness. It has very important applications in the fields of materials, information and energy. With the development of the solar photovoltaic industry, its demand continues to expand. Elemental silicon, as the main material for the development, production and application of solar cells, has also received extensive attention in its preparation process. [0003] At present, whether it is to produce monocrystalline silicon, polycrystalline silicon or amorphous silicon, the steps are to firstly convert quartz stone or silica (SiO 2 ) to carry out carbothermal reduction to obtain industrial silicon products. This method has seri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/00
Inventor 石朝辉张军玲陈仕谋何宏艳郎海燕冷明浩张锁江
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI