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Thin film edge field emitter based micro ion pump

An ion pump and fringe field technology, which is applied in the direction of discharge tube ion gun, ion diffusion discharge tube, pump, etc., can solve the problem of no micro-vacuum technology

Inactive Publication Date: 2015-09-23
HONEYWELL INT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to constraints on size, power, lifetime, and magnetic field strength for cold atoms and other high-vacuum micro-electro-mechanical systems (MEMS) applications, no currently available micro-vacuum technology meets all requirements

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  • Thin film edge field emitter based micro ion pump
  • Thin film edge field emitter based micro ion pump
  • Thin film edge field emitter based micro ion pump

Examples

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Embodiment Construction

[0012] In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and which show by way of example only specific exemplary embodiments. However, it is to be understood that other embodiments may be utilized and structural, mechanical, and electrical changes may be made. Furthermore, the methods presented in the figures and description are not to be seen as limiting the order in which the individual steps may be performed. Accordingly, the following detailed description is not intended to be limiting.

[0013] In order to overcome the above-mentioned problems, a new micro-vacuum pump technology is required for the ultimate success of miniaturized cold atom technology. Embodiments of the micro ion pump described here have several important advantages. Embodiments of the micro ion pump described herein have small dimensions of less than 1 cc volume. This is 70 times smaller than the smallest commercially available ion pumps,...

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Abstract

A micro-ion pump is provided. The micro-ion pump includes a plurality of thin-film-edge field emitters, a first gate electrode, a second gate electrode, and a high voltage anode. The plurality of thin-film-edge field emitters is in a first X-Z plane. The plurality of thin-film-edge field emitters has a respective plurality of end faces with a high aspect ratio in at least one Y-Z plane. The first gate electrode is in a second X-Z plane offset from the first X-Z plane. The second gate electrode is positioned in a third X-Z plane offset from the first X-Z plane. The high voltage anode is in a fourth X-Z plane offset from the plurality of thin-film-edge field emitters in the first X-Z plane. The second gate electrode is between the high voltage anode and the plurality of thin-film-edge field emitters.

Description

technical field [0001] This patent application claims priority to U.S. Provisional Patent Application No. 61 / 943,778, entitled "Micro-Ion Pumps Based on Thin Film Edge Field Emitters," filed February 24, 2014, which is hereby incorporated by reference fully incorporated herein. Background technique [0002] While cold atomic timing and navigation references provide extremely high accuracy, they require operation in high vacuum (~10-8 Torr). There have been ongoing efforts to miniaturize cold atom technologies, such as DARPA's Integrated Micro primary Atomic Clock Technology (IMPACT) and Chip-Scale Combinatorial Atomic Navigator (CSCAN), and The development of micro-sized vacuum technology is required to enable the portability of the device. Due to constraints on size, power, lifetime, and magnetic field strength for cold-atom and other high-vacuum micro-electro-mechanical systems (MEMS) applications, no currently available micro-vacuum technology meets all requirements. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J3/04B81B7/00
CPCH01J41/20H01J41/18H05K13/0023F04B19/006F04B35/04F04B37/14Y10T29/49117H05K13/00
Inventor S·廷
Owner HONEYWELL INT INC