Wafer growing device and method
The technology of a growth device and a growth method, which is applied in the field of wafer growth devices, can solve the problems affecting the wafer reliability test wafer yield rate, wafer control and uneven thickness of the wafer, etc., and achieves the effects of uniform thickness and improved yield rate.
Active Publication Date: 2015-09-23
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
The thickness of the control chip and the chip is not uniform, which directly affects the result of the chip reliability test and the yield rate of the chip
Method used
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Embodiment Construction
[0039] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0040] It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual impleme...
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The invention provides a wafer growing device and method. The device includes: a furnace tube; a wafer boat placed in the furnace tube; a first wafer group in which reverse sides of wafers are deposited with silicon nitride layers; a second wafer group which is close to the first wafer group and in which the reverse sides of wafers are deposited with silicon oxide layers; a plurality of monitor wafers placed in an upper part, a middle part and a lower part of the wafer boat; and a plurality of dummy wafers, including side dummy wafers and attached dummy wafers, wherein the side dummy wafers are placed above the first monitor wafer and under the third monitor wafer respectively, and the attached dummy wafers separate the first wafer group from the second wafer group and are placed above the third monitor wafer. The wafer growing device provided by the invention improves a result of a wafer reliability test and the yield of wafers while realizing simultaneous proceeding of a mixed manufacturing process of wafers with silicon nitride and ordinary silicon oxide wafers.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a wafer growing device and method. Background technique [0002] Since the surface layer of the wafer (Wafer) has a high affinity for oxygen molecules, it is easy to form a silicon oxide layer when the wafer surface is exposed to an oxygen-containing atmosphere. At present, the manufacturing method of the silicon oxide layer generally adopts the method of loading the wafer on the crystal boat, then placing the wafer boat in the furnace tube, raising it to an appropriate temperature, and introducing oxygen-containing gas such as oxygen or water vapor, and then a silicon oxide layer can be grown on the wafer. A layer of silicon dioxide with good adhesion to the silicon material. [0003] like figure 1 As shown, in order to inspect the wafer while producing the wafer, people usually use monitor wafers 120, 121 and 122, and when the wafer is loaded into the wafer boat 150, t...
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IPC IPC(8): H01L21/316H01L21/66H01L21/67
CPCH01L21/02164H01L21/67011H01L22/12H01L22/30
Inventor 范建国沈建飞
Owner SEMICON MFG INT (SHANGHAI) CORP