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Preparation method of silicon wafer material with platinum recombination center

A silicon wafer, platinum ion technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as affecting platinum activation, large platinum consumption, and increasing production costs, to reduce stress, prevent pollution, and achieve performance effect

Active Publication Date: 2018-08-14
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the fast recovery diode, the amount of platinum used as the recombination center is very small, and platinum sputtering or platinum evaporation causes excessive consumption of platinum, and too much platinum on the silicon wafer causes waste and increases the production cost; while platinum evaporation Or platinum sputtering is physically deposited on the surface of the silicon wafer, resulting in stress and excessive tension, which affects the activation of platinum and prevents platinum from becoming an effective recombination center, resulting in poor performance of fast recovery diodes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] A method for preparing a silicon sheet material with a platinum composite center, said method comprising the steps of:

[0049] (1) Soak the silicon wafer in a platinum-doped soaking solution at 5°C for 2000s to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 0.01 g of platinum per liter of deionized water Ammonium chloroplatinite, add 1000mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of the hydrofluoric acid is 30v%);

[0050] (2) Place the platinum-ion-adsorbed silicon wafer obtained in step (1) in a tube furnace, and anneal at 300°C for 500 minutes to obtain a platinum-doped silicon wafer;

[0051] (3) Rinse the silicon wafer obtained in step (2) for 2000 s at 10°C with a mixed solution of hydrochloric acid and hydrogen peroxide, take it out and dry it to obtain a silicon wafer material with a platinum composite center, which is denoted as silicon wafer I; the hydrochloric acid In the...

Embodiment 2

[0053] A method for preparing a silicon sheet material with a platinum composite center, said method comprising the steps of:

[0054] (1) Soak the silicon wafer in a platinum-doped soaking solution at 50°C for 0.1s to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 10 g of platinum per liter of deionized water For ammonium chloroplatinite, add 0.1 mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of the hydrofluoric acid is 30v%);

[0055] (2) Place the platinum-ion-adsorbed silicon wafers obtained in step (1) in a tube furnace, and anneal at 1200°C for 1 min to obtain platinum-doped silicon wafers;

[0056] (3) Rinse the silicon wafer obtained in step (2) at 30°C for 10 seconds with a mixed solution of hydrochloric acid and hydrogen peroxide, take it out and dry it to obtain a silicon wafer material with a platinum composite center, which is designated as silicon wafer II; the hydrochloric acid I...

Embodiment 3

[0058] A method for preparing a silicon wafer material with a platinum composite center comprises the steps of:

[0059] (1) Soak the silicon wafer in a platinum-doped soaking solution for 1000s at 30°C to obtain a silicon wafer with adsorbed platinum ions; the platinum-doped soaking solution contains 5g of chlorine per liter of deionized water For ammonium platinite, add 500mL of hydrofluoric acid per gram of ammonium chloroplatinite (the concentration of said hydrofluoric acid is 30v%);

[0060] (2') Soak the platinum-ion-adsorbed silicon wafer obtained in step (1) in hydrofluoric acid for 1 min to remove free platinum ions on the surface of the silicon wafer;

[0061] (2) Place the silicon wafer obtained in step (2') in a tube furnace, and anneal at 1000°C for 200 minutes to obtain a platinum-doped silicon wafer;

[0062] (3) Rinse the silicon wafer obtained in step (2) for 500 s at 20°C with a mixed solution of hydrochloric acid and hydrogen peroxide, take it out and dry ...

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PUM

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Abstract

The invention relates to a method of preparing a silicon chip material with a platinum composite center. The method comprises the following steps of (1) immersing a silicon chip inside a platinum doping solution to acquire a silicon chip with platinum ions absorbed; (2) annealing to acquire a platinum-doped silicon chip; (3) cleaning the silicon chip acquired in the step (2) through a mixed solution of hydrochloric acid and hydrogen peroxide, taking out the chip and drying the chip to acquire a silicon chip material with a platinum composite center. The method provided in the invention overcomes the technical prejudice of adopting evaporation or sputtering methods for platinum doping in the prior art and adopts solutions to perform platinum doping on the silicon chip material in an innovative way. A new idea for methods of preparing the silicon chip material with the platinum composite center is provided.

Description

technical field [0001] The invention belongs to the field of diode preparation, and in particular relates to a preparation method of a silicon sheet material with a platinum composite center and a fast recovery diode prepared from the silicon sheet material. Background technique [0002] Fast recovery diode (FRD for short) is a semiconductor diode with good switching characteristics and short reverse recovery time. It is mainly used in electronic circuits such as switching power supplies, PWM pulse width modulators, and frequency converters as high-frequency rectifier diodes , Freewheeling diodes or damping diodes are used. [0003] Among fast recovery diodes, silicon fast recovery diodes are widely used. In order to increase the switching speed, reduce the reverse recovery time T rr , the traditional method is to use heavy metal doping (such as gold doping, platinum doping) and electron radiation to introduce recombination centers into the diode in a large area or even as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L29/861
Inventor 王学良陈宏
Owner WUXI CHINA RESOURCES HUAJING MICROELECTRONICS
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