A Single Event Transient Effect Injection Method Based on Surrogate Model

Abstract

The invention discloses a single-event transient effect injection method based on an alternative model. The method adopts a double-exponential model to model the single-event transient effect of the circuit under test at the device layer, and respectively establishes the single-event transient effect of the circuit under test. The analog pulse signal form, trapezoidal pulse signal form and digital pulse signal form substitution model of the actual external characteristics of the physical layer; by setting the analog, trapezoidal or digital pulse signal injection mode, the physical layer actuality of the single event transient effect of the circuit under test under the corresponding mode is constructed. Alternative models of external characteristics, generating injection waveforms in corresponding modes, and completing the injection of single event transient pulses in different modes. The present invention does not need special test equipment, does not change the physical characteristics of the device / circuit under test, and can complete the injection of different single-event transient effect manifestations of a single device and circuit structure, providing circuit reinforcement technology, real-time fault diagnosis, isolation and fault tolerance Technical research provides a more realistic and reliable fault simulation environment.

Description

technical field [0001] The invention relates to a single-particle transient effect injection method based on a substitute model, belonging to the fields of circuit fault injection and signal processing and the like. Background technique [0002] High-energy particles incident on the semiconductor material will cause ionization of the target material and accumulate charges on the incident trajectory. The transient pulse generated by the charged particles affects the output of the next-stage circuit, resulting in system dysfunction and transient changes in the electrical performance of the device. The phenomenon is called single event transient (SET). As circuit technology enters the deep sub-micron era, small size and low voltage make circuit nodes more sensitive to electromagnetic interference and high-energy particles in the working environment, resulting in more and more serious single-event transient effects, devices or circuits. Soft failure rate increases. [0003] No...

AI Technical Summary

Problems solved by technology

At present, the simulation of the SET effect is concentrated on the physical level and electrical level of the device. In terms of the physical layer simulation of the device, the traditional SET effect injection methods mainly include laser irradiation and heavy ion bombardment. Both of these methods require special testing equipment. Not only increases the cost of testing, but also changes the physical characteristics of the device under test, and may even cause damage to the device under test

The simulation method at the electrical layer mainly adopts the computer to carry out the damage simulation simulation and the field programmable gate array FPGA to realize the hardware acceleration method. The former mainly carries out the mechanism modeling of a single device, and the calculation process is complicated and depends on the accuracy and speed of the simulation software. The time overhead is relatively large; the latter's simulation of single-event transients is mostly concentrated in the storage unit of the hardware, which has certain limitations

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