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A low-temperature sintered ternary system relaxor ferroelectric ceramic material

A low-temperature sintering technology for ferroelectric ceramics, applied in circuits, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problems of material component deviation, electrical performance decline, and high sintering temperature, and achieve Effects of improved high-field piezoelectric performance, enhanced temperature stability, and high electrical performance

Active Publication Date: 2017-08-25
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the problems of high sintering temperature of existing PIN-PMN-PT ceramics, serious lead pollution caused by lead volatilization, deviation of material components, decline of electrical properties, and high production cost, and provides a low-temperature sintered ternary system Relaxor Ferroelectric Ceramic Material, Preparation Method and Application

Method used

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  • A low-temperature sintered ternary system relaxor ferroelectric ceramic material
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  • A low-temperature sintered ternary system relaxor ferroelectric ceramic material

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specific Embodiment approach 1

[0019] Specific Embodiment 1: The general chemical formula of a low-temperature sintered ternary system relaxor ferroelectric ceramic material in this embodiment is xPb(In 1 / 2 Nb 1 / 2 )O 3 -(1-x-y)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -yPbTiO 3 -awt.% CuO, where 0.16≤x≤0.36, 0.32≤y≤0.36, 0<a≤2.

specific Embodiment approach 2

[0020] Embodiment 2: In this embodiment, a method for preparing a low-temperature sintered ternary system relaxor ferroelectric ceramic material is completed according to the following steps:

[0021] 1. Synthesis of pure-phase MgNb by solid-state reaction method 2 o 6 Precursor powder;

[0022] 2. Synthesis of pure phase InNbO by solid phase reaction method 4 Precursor powder;

[0023] Three, with PbO, TiO 2 , the MgNb of the pure phase that step one obtains 2 o 6 Precursor powder and pure phase InNbO obtained in step 2 4 The precursor powder was used as the raw material, and the pure phase xPb(In 1 / 2 Nb 1 / 2 )O 3 -(1-x-y)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -yPbTiO 3 Matrix powder, where 0.16≤x≤0.36, 0.32≤y≤0.36;

[0024] 4. The pure phase xPb(In 1 / 2 Nb 1 / 2 )O 3 -(1-x-y)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -yPbTiO 3 The matrix powder is used as the raw material, and the low-temperature sintered ternary system relaxor ferroelectric ceramic material is prepared by using the solid phas...

specific Embodiment approach 3

[0025] Specific embodiment three: the difference between this embodiment and specific embodiment two is: the MgNb of pure phase is synthesized by solid phase reaction method in step one 2 o 6 Precursor powder is specifically carried out according to the following steps:

[0026] According to the chemical formula MgNb 2 o 6 The ratio of MgO and Nb was weighed 2 o 5 , will weigh the MgO and Nb 2 o 5 Mix and place in a polyethylene ball milling tank, use absolute ethanol as the ball milling medium, agate balls as the balls, and mill for 24h to 72h to obtain the wet material A after ball milling, and place the wet material A after ball milling at a temperature of 50°C Dry in an oven at ~100°C to obtain dry block A, grind and crush the dry block A in an agate mortar to obtain powder A, then place powder A in a covered alumina crucible, Pre-calcine at 1000℃~1150℃ for 2h~6h to obtain pure phase MgNb 2 o 6 Precursor powder. Others are the same as in the second embodiment.

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Abstract

A low-temperature sintering ternary relaxor ferroelectric ceramic material, the invention relates to a low-temperature sintering ternary relaxor ferroelectric ceramic material, a preparation method and an application thereof. The present invention solves the problems of high sintering temperature of the existing PIN-PMN-PT ceramics, serious environmental pollution caused by lead volatilization, decreased material performance and high production cost. The general chemical formula of the ceramic material is xPb(In1 / 2Nb1 / 2)O3‑(1‑x‑y)Pb(Mg1 / 3Nb2 / 3)O3‑yPbTiO3‑awt.%CuO. Methods: 1. Synthesis of MgNb2O6 precursor by solid-phase reaction; 2. Synthesis of InNbO4 precursor by solid-phase reaction; 3. Synthesis of PIN-PMN-PT matrix powder by solid-phase reaction; Low temperature sintered ternary relaxor ferroelectric ceramics. The invention is used for preparing high-power piezoelectric buzzers and multilayer piezoelectric devices.

Description

technical field [0001] The invention relates to a ternary system relaxation ferroelectric ceramic material, a preparation method and an application thereof. Background technique [0002] The ternary system relaxor ferroelectric material Pb(In 1 / 2 Nb 1 / 2 )O 3 -Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 (referred to as PIN-PMN-PT) is known for its higher than binary system Pb (Mg 1 / 3 Nb 2 / 3 )O 3 -PbTiO 3 The high phase transition temperature and large coercive field of materials have attracted extensive attention in the material research community in recent years. This system has a good application prospect in the development of a new generation of wide temperature range and high power piezoelectric devices. Most of the current research work focuses on the preparation and characterization of PIN-PMN-PT single crystals. Single crystal materials have excellent electrical properties, but their complex preparation process, obvious component segregation, high price and poor mechani...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187C04B35/499C04B35/622H10N30/853
Inventor 常云飞吴杰孙媛杨彬曹文武
Owner HARBIN INST OF TECH