Semiconductor device manufacturing process and semiconductor device
A manufacturing process and semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor electrical conductivity, achieve good electrical conductivity, ensure electrical conductivity, and simple process
Active Publication Date: 2019-01-08
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0005] The present application aims to provide a semiconductor device manufacturing process and semiconductor device to solve the problem of poor conductivity of semiconductor devices in the prior art
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[0029] The embodiments of the application will be described in detail below with reference to the accompanying drawings, but the application can be implemented in many different ways defined and covered by the claims.
[0030] In order to solve the problem of poor conductivity of semiconductor devices pointed out in the background art, the present application provides a semiconductor device manufacturing process. Such as Figure 4 to Figure 8 As shown, the manufacturing process of the semiconductor device includes the liquid-phase metal powder 10 coating process on the surface of the wafer. Due to the liquid-phase metal powder 10 coating process on the surface of the wafer, the inside of the through hole 40 between two adjacent metal gates 50 and the upper surface of the dielectric layer 30 can be uniformly coated with sufficient reaction amount The liquid-phase metal powder 10 ensures that the liquid-phase metal powder 10 can finally form the metal silicide 12 in the through...
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The application provides a semiconductor device manufacturing process and a semiconductor device. The semiconductor device manufacturing process includes the step of conducting liquid phase metal powder coating and processing on the surface of a wafer. Liquid phase metal powder coating and processing is conducted on the surface of the wafer, so liquid phase metal powder with the sufficient amount for reaction evenly coats a through hole between two adjacent metal gate electrodes and also evenly coats the top surface of a dielectric layer, the liquid phase metal powder can finally form metal silicide in the through hole, and the thickness of the metal silicide in all positions can meet a usage requirement. Therefore, the positions with the metal silicide have the characteristics of good conductivity, low resistance, low energy consumption or the like, and thus the conductive performance, the use reliability and the work stability of a semiconductor device can be ensured. Meanwhile, the semiconductor device manufacturing process is simple, and exhibits great manufacturing reliability.
Description
technical field [0001] The present application relates to the technical field of semiconductor devices, and more particularly, to a manufacturing process of a semiconductor device and a semiconductor device. Background technique [0002] As the thickness of complementary metal oxide semiconductors (abbreviated as COMS) becomes thinner and thinner (currently the thickness of complementary metal oxide semiconductors has been reduced to 20 nanometers or even thinner), high dielectric constant metal gates (abbreviated as HKMG) are widely used Applied in Complementary Metal Oxide Semiconductors. [0003] Such as figure 1 The illustrated semiconductor device has a metal gate 50', a via 40', a substrate 20' and a dielectric layer 30'. In the subsequent manufacturing process, it is necessary to figure 1 Physical vapor deposition (referred to as PVD) treatment of the semiconductor device in order to obtain such as figure 2 The metal layer 11' shown. Then, a metal silicide 12' i...
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IPC IPC(8): H01L21/28H01L29/45
Inventor 刘焕新
Owner SEMICON MFG INT (SHANGHAI) CORP