Process chamber detection device and method for detecting process environment in process chamber
A technology of process chamber and detection device, applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve plasma damage, influence of ultra-low dielectric constant material composition and properties, and surface hydrophobicity of dielectric materials Deterioration and other problems to achieve the effect of preventing damage
Active Publication Date: 2019-03-12
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
[0004] When performing pre-cleaning process, it is easy to cause plasma damage to ultra-low dielectric constant materials, even with H 2 Chemical reaction pre-cleaning with reducing gases such as process gases is also likely to affect the composition and properties of ultra-low dielectric constant materials, mostly manifested in the increase in the K value of the dielectric material and the deterioration of the surface hydrophobicity of the dielectric material, etc.
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[0032] In order to solve the problem of ion current causing damage to ultra-low dielectric constant materials, a new process chamber is proposed to realize real-time detection, and then stop the process when the ion current density exceeds the normal value to avoid unqualified products.
[0033] In the following, taking the pre-cleaning chamber as an example (that is, the process chamber is a pre-cleaning chamber) and in conjunction with the drawings, the technical features and advantages of the present invention will be described in more detail.
[0034] See figure 1 As shown, figure 1 To illustrate the structure of the pre-cleaning chamber when it is working, the pre-cleaning chamber 100 includes a cavity 110, a screen structure 180, a heater 130, a heating base 140 (Heater), a radio frequency system 150, a spiral tube coil 160, and quartz Top 170.
[0035] The spiral tube coil 160 is installed on the quartz top 170. In this embodiment, the radio frequency system 150 uses a 2 MHz...
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The invention relates to a processing chamber and a method for detecting processing environment of the processing chamber. A device for detecting the processing environment of the processing chamber is arranged in the processing chamber. The device comprises a detector and a detection circuit. The detection circuit comprises a voltage-stabilizing power supply and a test resistor. One end of the voltage-stabilizing power supply is grounded, and the other end of the voltage-stabilizing power supply is electrically connected with one end of the test resistor. The other end of the test resistor is electrically connected with the detector. The detector is arranged in the internal part of the cavity of the processing chamber. The detector is used for detecting ion flow density in the processing chamber. The working steps of the method for detecting the processing environment of the processing chamber are listed as follows: processing is started, and voltage of the two ends of the test resistor is measured after plasmas are generated in the processing chamber through excitation; and then ion flow density in the processing chamber is calculated according to the measured voltage and compared with range of normal values of ion flow density. According to the processing chamber and the method, the objective of detecting the processing environment of the chamber in real time can be achieved.
Description
Technical field [0001] The invention relates to the field of semiconductor production, in particular to a process chamber detection device in the field of semiconductor production. Background technique [0002] In the prior art, the precleaning (Preclean) technology is a very important part of the copper interconnection process, and the precleaning ensures the reliability of the device. [0003] At the 28nm technology node, ultra low k material (k <2.5) As the material for making the dielectric layer, however, the ultra-low dielectric constant material usually has a loose structure, very soft, and porous structure, such as common SiOCH. [0004] When the pre-cleaning process is carried out, it is easy to cause plasma damage to ultra-low dielectric constant materials, even if H 2 Reducing gases such as process gases are used for chemical reaction-type pre-cleaning, which also easily affects the composition and properties of ultra-low dielectric constant materials, which are mostly ...
Claims
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IPC IPC(8): H01L21/67H01L21/66
Inventor 赵可可
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD