Thermal treatment apparatus and thermal treatment method
A technology of heat treatment device and heat treatment method, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that have not been recorded, and achieve the effect of uniform and rapid heating
Active Publication Date: 2015-11-25
TOKYO ELECTRON LTD
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Problems solved by technology
However, Patent Document 2 does not describe a technique for performing uniform heating while suppressing the influence of warpage when the substrate is placed on a hot plate to heat the substrate.
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[0034] As an embodiment of the present invention, an example of processing a thin substrate of lithium tantalate (hereinafter referred to as "substrate W") will be described. figure 1 , figure 2 The structure of a heat treatment module (heat treatment apparatus) 1 for heating a substrate W is shown. For example, the heat treatment module 1 is mounted on a coating and developing device for coating a resist solution on the substrate W to form a resist film and developing the exposed resist film.
[0035] Such as figure 1 As shown in the exploded perspective view of , the heat treatment assembly 1 of this example includes: a heating plate 2, which is arranged on the upper surface of the base part 11, for placing the substrate W as the processing object; and support pins 3, which are used to place the substrate W W is placed on the heating plate 2 .
[0036] The heating plate 2 has a structure in which a resistance heating element 21 is embedded in a disc-shaped heating plate ...
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Abstract
The invention provides a thermal treatment apparatus and a thermal treatment method which can provide even and fast heating to a substrate which has warpage generated during the temperature raising process. According to the thermal treatment apparatus (1), a heating plate (2) of which the temperature is adjusted to a heating temperature is used for carrying the substrate (W) which recovers to a flat shape after a warpage occurs during the temperature raising process. A supporting component (3) supports the substrate (W) from a lower surface side of the substrate (W) and performs lifting by using a lifting mechanism (31,32) between a joint position on the above side and a position on the below side of the heating plate (2). A controller (4) performs control so as to enable the substrate (W), with the descending period from the joint position, on the above side of the heating plate (2), to use heat from the heating plate (2) to raise the temperature of the substrate (W) to a temperature whereby a warpage occurs. Next, after a recovery period during which time the substrate (W) recovers to a flat shape, the substrate (W) is made to be carried by the heating plate (2).
Description
technical field [0001] The invention relates to a heat treatment device and a heat treatment method for heating a substrate. Background technique [0002] In the manufacturing process of a device by photolithography, a heat treatment apparatus for heating a substrate coated with a resist solution, an exposed substrate, and the like is used. In this heat treatment apparatus, there is a heat treatment apparatus that heats a substrate by placing the substrate on a heating plate adjusted to a heating temperature. [0003] On the other hand, there are various types of substrates used in the manufacturing process of devices, and sometimes heat treatment is performed on substrates whose thermal conductivity is lower than that of silicon substrates ( Substrate material (for example, lithium tantalate (LiTaO 3 ): about 4.6W / (m·℃)~8.8W / (m·℃), gallium arsenide (GaAs): about 55W / (m·℃), lithium niobate (LiNbO 3 ): About 38W / (m·℃), etc.) composition. [0004] However, when the substra...
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IPC IPC(8): H01L21/67
CPCH01L21/67103
Inventor 境宏之上田直晃岩坂英昭川路辰也
Owner TOKYO ELECTRON LTD