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Method for restraining hillocks formation on copper alloy thin film surface by applying prestressing force

A copper alloy, pre-stressed technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of reducing the service life of interconnecting wires and the service safety of micro-devices, achieving low cost, inhibiting easy formation Convex, simple effect

Active Publication Date: 2015-12-09
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Academia and industry have found that under the action of electric field, thermal field and stress field, atoms on the surface of flexible substrate Cu thin film and Cu alloy thin film are easy to diffuse to form a large number of hillocks (Hillocks) or particles, which seriously reduces the service life of interconnection lines and microstructures. Device service safety

Method used

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  • Method for restraining hillocks formation on copper alloy thin film surface by applying prestressing force
  • Method for restraining hillocks formation on copper alloy thin film surface by applying prestressing force
  • Method for restraining hillocks formation on copper alloy thin film surface by applying prestressing force

Examples

Experimental program
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Effect test

Embodiment 1

[0019] A 180nm thick Cu-3.5Cr alloy film was prepared on a polyimide substrate (the substrate size is 100mm in length, 100mm in width, and 0.6mm in thickness) by magnetron sputtering. When the sample was taken out, it was found that the entire film surface was convex, and the film could be judged In the state of residual compressive stress, the actual residual stress of the sample measured by an X-ray diffraction stress meter is compressive stress -136MPa. Place one sample membrane face up on the attached figure 2 On the concave mold shown, make the film-based system in a depressed state, fix both ends, and then anneal in an argon atmosphere protection furnace, the annealing temperature is 200°C, the annealing time is 30 minutes, and the film is taken out after cooling with the furnace. In this way, the internal stress of the film can be close to an equilibrium state, and the diffusion of atoms in the film driven by stress release can be reduced. Put another sample directly ...

Embodiment 2

[0021] The 210nm thick Cu-6.8Cr alloy film was prepared on the polyimide substrate (the substrate size is 100mm in length, 100mm in width, and 0.6mm in thickness) by magnetron sputtering method. When taking out the sample, it was found that the entire film surface was convex, and the film could be judged In a state of compressive stress, the actual residual stress of the sample measured by an X-ray diffraction stress meter is compressive stress-181MPa. Place one sample membrane face up on the attached image 3 On the concave mold shown, make the film-based system in a depressed state, fix both ends, and then anneal in an argon atmosphere protection furnace, the annealing temperature is 300°C, and the annealing time is 100 minutes, and the film is taken out after cooling with the furnace. In this way, the internal stress of the film can be close to an equilibrium state, and the diffusion of atoms in the film driven by stress release can be reduced. Put another sample directly ...

Embodiment 3

[0023] A 130nm thick Cu-9.2Cr alloy film was prepared on a polyimide substrate (the substrate size is 100mm in length, 100mm in width, and 0.6mm in thickness) by magnetron sputtering. When the sample was taken out, it was found that the entire film surface was convex, and the film could be judged In the state of residual compressive stress, the actual residual stress of the sample measured by an X-ray diffraction stress meter is tensile stress -225MPa. Place one of the two identical samples face up on the attached Figure 4 On the concave mold shown, make the film-based system in a concave state, fix both ends, and then anneal in an argon atmosphere protection furnace, the annealing temperature is 230°C, and the annealing time is 60 minutes, and the film is taken out after cooling with the furnace. In this way, the internal stress of the film can be close to a balanced state, and the diffusion of atoms in the film driven by the release of residual compressive stress can be red...

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Abstract

A method for restraining hillocks formation on a copper alloy thin film surface by applying prestressing force is disclosed. The method comprises the steps of applying the prestressing force on the copper alloy thin film, and then heating and annealing in a vacuum furnace or an atmosphere protective furnace to enable the stress in the interior of the thin film to be close to a balanced state so as to restrain the formation of the hillocks, which are caused by thin film atomic diffusion driven by pressure stress release. According to the method, by applying the prestressing force on the copper thin film on a flexible base body and by annealing processing to adjust and control the atomic diffusion behaviors of the copper alloy thin films, the phenomenon that hillocks are easy to form on the copper alloy thin film surfaces in the conventional annealing process is effectively restrained, and technological support for obtaining flexible polyimide base body copper alloy thin film devices with high stability and long service life is provided. The magnitude of the applied prestressing force can be adjusted and controlled according to needs by adjusting moulds, and the phenomenon that hillocks are easy to form on the copper alloy thin film surfaces in the annealing process can be effectively restrained

Description

technical field [0001] The invention relates to the field of preparation of micro- and nano-scale materials, in particular to a method for applying prestress to suppress the formation of bumps on the surface of copper alloy thin films. Background technique [0002] Generally speaking, the existence of residual stress in the film is a common phenomenon in the films prepared by sputtering, and almost all films are in a certain state of stress. The magnitude of the residual stress ranges from tens of MPa to hundreds of MPa, even in some high-melting point films there are residual stresses of the order of GPa. Since the stress state in the film is directly related to the design and service life of microelectronic devices, it has become a research hotspot in recent years. People have conducted in-depth research on the evolution behavior of the residual stress of the film, and the results show that the residual stress of the thin film (Al, Ag, Cu, etc.) with a thickness of severa...

Claims

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Application Information

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IPC IPC(8): H01L21/60
CPCH01L24/83H01L2224/83948
Inventor 孙浩亮魏明王广欣宋忠孝游龙马飞谢敬佩刘舒
Owner HENAN UNIV OF SCI & TECH