Porous silicon-based particles, preparation method thereof, and negative electrode active material containing same
A negative electrode active material and porosity technology, which is applied in the field of porous silicon-based particles and their preparation, as well as the negative electrode active material containing the same, can solve the problem of damage to the conductive network, increased surface area side reactions, and uniform nano-silicon negative electrode active material. Difficulty in distribution, etc., to achieve the effect of reducing volume expansion and easy dispersion
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[0055] The method for preparing porous silicon-based particles according to an embodiment of the present invention may include: step (i), using an etching solution to remove the Si or SiO x (0<x<2) an oxide film layer on the surface of the particle; and
[0056] Step (ii), in containing Si or SiO that has removed above-mentioned oxide film layer x (0x (0<x<2) Non-linear pores are formed on the particles.
[0057] First, the above step (i) may be to use an etching solution to remove the Si or SiO x (0<x<2) the step of forming an oxide film layer on the surface of the particle.
[0058] That is, the above step (i) is to remove the Si or SiO x (0x (0<x<2) The electroless metal deposition (electroless metal deposition) of the metal catalyst is carried out more smoothly on the particles, and the surface treatment process is carried out to make the coating more uniform.
[0059] Specifically, Si or SiO can be x (0x (02 ).
[0060] According to an embodiment of the present inve...
Embodiment 1
[0113] x (0
[0114] After immersing powdered silicon in 8.5M hydrogen fluoride heated to 50°C, it was stirred for about 30 minutes. This process removes the natural oxide film (SiO 2 ), the above-mentioned natural oxide film layer exists on the surface of the silicon in the powder state, so that the surface treatment is carried out so that the electroless metal deposition (Electrolessmetals deposition) of the metal catalyst is carried out more smoothly on the silicon surface, and the coating is more uniform, thereby The silicon particles with the oxide film removed were obtained.
[0115] x (0x (0
[0116] To the removal of the oxide film layer (SiO 2 ) silicon, and mixed with an aqueous solution of 8.5M hydrogen fluoride into 15mM copper sulfate (CuSO 4 ) aqueous solution, the above-mentioned copper sulfate (CuSO 4 ) aqueous solution having the same volume as that of hydrogen fluoride was stirred for about 3 hours, whereby etching was performed. Through this process, a...
Embodiment 2 to Embodiment 6
[0120] Removed the oxide film layer (SiO 2 ) silicon, and mixed with an aqueous solution of 8.5M hydrogen fluoride into 15mM copper sulfate (CuSO 4 ) aqueous solution, the above-mentioned copper sulfate (CuSO 4 ) aqueous solution with the same volume as hydrogen fluoride, and stirred for about 6 hours, 9 hours, 12 hours, 18 hours and 24 hours respectively. Except for this, porous silicon particles were produced in the same manner as in Example 1 above.
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