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Semiconductor device and method of forming vertical structure

A vertical structure, drain technology, applied in the field of vertical structure, can solve problems such as reducing device performance

Active Publication Date: 2019-06-11
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in vertical devices, the contact resistance of the source / drain parasitic resistance degrades device performance, especially in high-speed applications

Method used

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  • Semiconductor device and method of forming vertical structure
  • Semiconductor device and method of forming vertical structure
  • Semiconductor device and method of forming vertical structure

Examples

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Embodiment Construction

[0029] The following disclosure provides a number of different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component are formed in direct contact. An embodiment in which an additional component may be formed between such that the first component and the second component may not be in direct contact. In addition, the present invention may repeatedly refer to numerals and / or letters in each example. This repetition is for the purposes of brevity and clarity, an...

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Abstract

According to exemplary embodiments, the present invention provides a method of forming a vertical structure. The method includes the following operations: providing a substrate; providing a vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form silicide over the drain of the vertical structure. The invention also provides a semiconductor device.

Description

technical field [0001] The present invention generally relates to the field of semiconductors, and more particularly, to vertical structures of semiconductor devices. Background technique [0002] Vertical semiconductor devices, such as vertical gate-all-around transistors, are an emerging field of research in the semiconductor industry. However, in vertical devices, the contact resistance of source / drain parasitic resistance degrades device performance, especially in high-speed applications. Therefore, there is a need to improve the above disadvantages. Contents of the invention [0003] According to one aspect of the present invention, there is provided a method of forming a vertical structure, comprising: providing a substrate; providing a vertical structure having a drain above the substrate; forming a metal layer; and annealing the metal layer to form silicide over the top and sidewalls of the drain of the vertical structure. [0004] Preferably, providing the vert...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/0649H01L29/42392H01L29/7827H01L29/66666H01L21/31144H01L21/823885H01L21/31053H01L21/823487
Inventor 王志豪连万益朱熙甯杨凯杰蓝文廷
Owner TAIWAN SEMICON MFG CO LTD