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Manufacturing method of single-chip triaxial anisotropic magnetoresistive sensor

An anisotropic magnetic and manufacturing method technology, applied in the field of magnetic sensors, can solve the problems of high processing cost and complicated manufacturing process, and achieve the effects of low cost, good compatibility and wide applicability

Inactive Publication Date: 2016-01-20
HANGZHOU SILAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a single-chip three-axis anisotropic magnetoresistive sensor to solve the problems of complex manufacturing process and high processing cost of the existing three-axis anisotropic magnetoresistive sensor

Method used

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  • Manufacturing method of single-chip triaxial anisotropic magnetoresistive sensor
  • Manufacturing method of single-chip triaxial anisotropic magnetoresistive sensor
  • Manufacturing method of single-chip triaxial anisotropic magnetoresistive sensor

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Embodiment 1

[0069] Reference attached Figure 8 shown, combined with Figures 1A-7B , the manufacturing method of the single-chip three-axis anisotropic magnetoresistive sensor of the present embodiment comprises the following steps:

[0070] Step S10: providing a substrate 100, the substrate 100 includes an X-axis region 100a, a Y-axis region 100b, and a Z-axis region 100c;

[0071] Step S11: forming a groove 110 in the Z-axis region 100c of the substrate 100, the groove 110 having an inclined sidewall 110a;

[0072] Step S12: forming an insulating layer 120, the insulating layer 120 is formed on the substrate 100 and its groove 110;

[0073] Step S13: forming magnetoresistive strips, the magnetoresistive strips include X-axis magnetoresistive strips 131 formed on the insulating layer 120 on the X-axis region 100a, and formed on the insulating layer 120 on the Y-axis region 100b Y-axis magnetoresistive strips 132 and Z-axis magnetoresistive strips 133-1, 133-2 formed on the insulating...

Embodiment 2

[0123] Such as Figures 9A-9B As shown, the difference between this embodiment and Embodiment 1 is that the Z-axis magnetoresistive strips 133 are only formed on the insulating layer 120 of one side wall of each groove 110, and the X and Y-axis magnetoresistive strips 131, 132 are arranged on On the X-axis region 100a and the Y-axis region 100b, the Z-axis magnetoresistive strip 133 is disposed on the Z-axis region 100c. The schematic diagram of the front layout of the X, Y, Z axis magnetic resistance strips is attached Figure 9A As shown, since the Z-axis magnetoresistive strips 133 are only formed on the insulating layer 120 of one side wall of each groove 110, the Z-axis magnetoresistive strips 133 on two adjacent grooves only need to pass through one Z The shaft metal connection 153 realizes electrical connection.

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Abstract

The invention provides a manufacturing method of a single-chip triaxial anisotropic magnetoresistive sensor. A groove with an inclined side wall is formed in a substrate; a Z-axis magnetoresistive strip and a Z-axis short-circuit electrode are formed on the side wall of the groove; and an X-axis magnetoresistive strip, a Y-axis magnetoresistive strip, an X-axis short-circuit electrode and a Y-axis short-circuit electrode are formed on a plane of the substrate, so that an X-axis magnetic sensing element, a Y-axis magnetic sensing element and a Z-axis magnetic sensing element are integrated on a chip; the structure is simple; the Z-axis magnetic sensing element does not need to be vertically packaged; and the manufacturing method is easy to manufacture, relatively low in cost, good in compatibility with a conventional microelectronics technology and suitable for a mass industrialized production, and has good applicability.

Description

technical field [0001] The invention relates to the technical field of magnetic sensors, in particular to a method for manufacturing a single-chip three-axis anisotropic magnetoresistive sensor. Background technique [0002] Anisotropic magnetoresistive (AMR) sensors are new magnetoresistance effect sensors in modern industries, which are becoming increasingly important, especially in electronic compasses in smartphones and parking sensors, angle sensors, ABS (automatic brake system) sensors and tire pressure sensors have been applied. In addition to the anisotropic magnetoresistance (AMR) sensor, the current main technologies of the magnetic sensor include the Hall effect sensor, the giant magnetoresistance (GMR) sensor, and the tunnel magnetoresistance (TMR) sensor. Much higher sensitivity, and the technical implementation is more mature than GMR and TMR sensors, so the application of anisotropic magnetoresistive (AMR) sensors is more widely used than other magnetic senso...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/12H01L27/22
Inventor 陈雪平闻永祥刘琛孙福河
Owner HANGZHOU SILAN INTEGRATED CIRCUIT
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