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Method to etch tungsten containing layer

A tungsten layer and etching technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as inability to achieve

Inactive Publication Date: 2016-02-10
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Previously, this selectivity was not possible

Method used

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  • Method to etch tungsten containing layer
  • Method to etch tungsten containing layer
  • Method to etch tungsten containing layer

Examples

Experimental program
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Embodiment

[0015] In an example of a preferred embodiment of the present invention, a substrate having a stack having at least one tungsten-containing layer is provided (step 104). Figure 2A is a cross-sectional view of a stack 200 having a substrate or feature layer 204 disposed below an upper layer 208 . In this embodiment, feature layer 204 is silicon and upper layer 208 is silicon oxide. Features 212 have been formed within feature layer 204 . Lateral features 216 have been formed within the sidewalls of features 212 . A W-containing layer 220 is deposited over the stack 200 . Such deposition may be performed using electroplating or electroless deposition or another method of depositing a conformal metal layer.

[0016] In one embodiment, all processing can be performed in a single plasma etch chamber. image 3 is a schematic diagram of a plasma processing system 300 including a plasma processing tool 301 . The plasma processing tool 301 is an inductively coupled plasma etching...

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Abstract

A method for etching a tungsten containing layer is provided. An etch gas is provided comprising O2 and a fluorine containing component, wherein the etch gas has at least as many oxygen atoms as fluorine atoms. A plasma is formed from the etch gas. The tungsten containing layer is etched with the plasma formed from the etch gas.

Description

technical field [0001] The present invention relates to selectively etching tungsten (W) containing layers during the fabrication of semiconductor devices. Background technique [0002] During semiconductor wafer processing, features may be etched through the tungsten-containing layer. [0003] During the formation of certain features featuring tungsten, it is necessary to selectively etch tungsten while minimally etching silicon, silicon oxide, silicon oxynitride, silicon nitride, or titanium nitride. Previously, this selectivity was not possible. Contents of the invention [0004] In order to achieve the above purpose and according to the purpose of the present invention, a method for etching a tungsten-containing layer is provided. Provides an etching gas that includes O 2 and a fluorine-containing component, wherein the etching gas has at least as many oxygen atoms as fluorine atoms. Plasma is formed from this etching gas. The tungsten-containing layer is etched b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213
CPCH01L21/32136
Inventor 向华傅乾
Owner LAM RES CORP
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