A kind of crucible for preparing sapphire single crystal and preparation method

Abstract

The invention relates to a crucible for preparing sapphire single crystal and a preparation method. The crucible includes a crucible body with an open top and a top cover matched with the crucible body. The top cover is parallel to the bottom of the crucible body, and the crucible body can be opposed to the top The plane where the cover is located moves in parallel. The crucible body is composed of a square main body and a triangular end butt joint. The cover can prevent the quality of the sapphire single crystal from being damaged when the heating element is damaged or other substances fall into the crucible body. The prepared sapphire single crystal has the advantage of uniform and sufficient heat exchange, can reduce the annealing time of the prepared sapphire single crystal, shorten the preparation cycle of the sapphire single crystal, and reduce the production cost of the sapphire single crystal.

Description

technical field [0001] The invention relates to the technical field of preparation of large sheet-shaped sapphire single crystals, in particular to a crucible and a preparation method for preparing sapphire single crystals. Background technique [0002] Sapphire α-Al 2 o 3 Single crystal has excellent optical, mechanical, thermal, dielectric, corrosion resistance and other properties. It has high light transmittance and wide transmission band in visible and infrared bands. Compared with many other optical window materials, it is more stable. Excellent chemical and thermodynamic properties, such as acid and alkali corrosion resistance, high temperature resistance, high hardness, high tensile strength, high thermal conductivity and remarkable thermal shock resistance. The above properties make sapphire materials widely used in wide-bandgap semiconductor materials such as gallium nitride substrates, femtosecond laser matrix materials, military infrared windows, aerospace medi...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems in the above-mentioned prior art that the integrated crucible is used to make the grown sapphire single crystal in the closed crucible and the environment heat exchange unevenly and sufficiently, and the temperature is lowered slowly, resulting in a longer production cycle and higher production costs for the production of sapphire single crystal, The invention provides a crucible for preparing a sapphire single crystal and a preparation method

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