Formation method of semiconductor structure
A semiconductor and gate structure technology, which is applied in the field of semiconductor structure formation, can solve the problems of poor nanowire morphology, poor performance of nanowire transistors, and reduced yield, and achieve good shape, improved performance, and avoid bending Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0033] As mentioned in the background art, the nanowires formed in the prior art have poor morphology, resulting in poor performance and reduced yield of the formed nanowire transistors.
[0034] After research, it was found that because the nanowires perpendicular to the substrate surface are easily deformed and bent after annealing, the morphology of the nanowires is poor, and even the problem of bridging adjacent nanowires occurs, which in turn makes the formed nanowire transistors good. rate drops.
[0035] For details, please refer to figure 1 , figure 1 It is a schematic diagram of a cross-sectional structure of nanowires after thermal annealing, including: a substrate 100 ; an opening 101 inside the substrate 100 ; and several nanowires 102 on the bottom surface of the opening 101 .
[0036] Since the nanowire 102 is in a semi-molten state during the thermal annealing process, the atoms in the nanowire 102 can move to positions with lower free energy, so that the corn...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap