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Structure and formation method of dual damascene structure

A device structure and semiconductor technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve problems such as difficult manufacturing processes

Active Publication Date: 2016-03-02
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the manufacturing process is increasingly difficult to
Forming interconnect structures with ever-shorter pitches in semiconductor devices becomes a challenge

Method used

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  • Structure and formation method of dual damascene structure
  • Structure and formation method of dual damascene structure
  • Structure and formation method of dual damascene structure

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Embodiment Construction

[0033] The following disclosure provides many different embodiments, or examples, for implementing different features of the inventive subject matter. Specific examples of components or configurations are described below to simplify the present invention. Of course, these are merely examples and not intended to be limiting. For example, in the description below, forming a first feature on or over a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments in which the first feature and the second feature may be formed in direct contact. Embodiments in which an additional part is formed between parts such that the first part and the second part are not in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various instances. These repetitions are for simplicity and clarity and do not in themselves indicate a relationship between the vari...

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Abstract

The invention provides a structure and a formation method of a dual damascene structure. A structure and a formation method of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a conductive feature over the semiconductor substrate. The semiconductor device structure also includes a dielectric layer over the conductive feature and the semiconductor substrate and a via hole in the dielectric layer. The via hole has an oval cross section. The semiconductor device structure further includes a trench in the dielectric layer, and the via hole extends from a bottom portion of the trench. The trench has a trench width wider than a hole width of the via hole. In addition, the semiconductor device structure includes one or more conductive materials filling the via hole and the trench and electrically connected to the conductive feature.

Description

technical field [0001] The present invention relates to structures and methods of forming dual damascene structures. Background technique [0002] Semiconductor integrated circuits (ICs) have undergone rapid development. Technological advances in IC materials and design have produced multiple generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased, while feature size (ie, the smallest component that can be made using a fabrication process) has decreased. This scaling down process typically provides benefits by increasing production efficiency and reducing associated costs. [0003] One approach used by the industry to meet device density requirements is to use damascene and dual damascene structures for interconnect structures. In the dual damascene process, open trenches are used to pattern the underlying...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L21/768H01L21/311
CPCH01L21/76808H01L21/76811H01L21/31144H01L21/76813H01L21/76816H01L21/28H01L21/28008H01L21/3205
Inventor 彭泰彥谢志宏
Owner TAIWAN SEMICON MFG CO LTD