Method for manufacturing an element substrate
一种制造方法、元件基板的技术，应用在着墨装置、印刷等方向，能够解决流路阻力变化、低产出率、影响喷出特性等问题，达到防止流路宽度的变化的效果
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 approach
[0039] Figure 1A to Figure 1G is a diagram of a manufacturing method of an element substrate according to the present invention. In particular, steps closely related to the present invention are shown in side sectional views (sectional side view or vertical section). Figure 2Ais a side sectional view showing an element substrate manufactured using the present invention. Figure 2B is used to show along the Figure 2A The cross-sectional view of the component substrate taken by the line x-x'.
[0040] Such as Figure 2A and Figure 2B As shown, the element substrate 1 includes a discharge port 2 for discharging liquid, and a pressure chamber 3 for storing the liquid discharged through the discharge port 2 and for applying discharge pressure to the liquid. One of the walls of the pressure chamber 3 is formed by a diaphragm 4 . The actuating part 5 is joined to the diaphragm 4 . Actuation of the actuating part 5 deforms the diaphragm 4 to apply pressure to the liquid in ...
no. 2 approach
[0068] Then, refer to Figure 3A to Figure 9B A second embodiment according to the present invention will be described. Figure 3A , Figure 3B , Figure 4A and Figure 4B is a schematic diagram of the substrate 14 and the driving layer used in the second embodiment. Figure 3A is a cross-sectional view of the substrate 14 and the drive layer, Figure 3B is viewed from the direction of arrow F Figure 3A A plan view of the substrate 14 and the driving layer is shown in . Figure 4A is shown along Figure 3B The cross-sectional view of the substrate 14 and the driving layer taken by the line y-y', Figure 4B is along Figure 3B A cross-sectional view of the substrate 14 and the driving layer taken along the line z-z'.
[0069] Note that in Figure 3A , Figure 3B , Figure 4A and Figure 4B In , for easy understanding, the pressure chamber 3 as the element substrate 1, the flow rate reducing portion 6, and the communication hole 7 are shown by dotted lines (see Fig...
no. 3 approach
[0084] Then, refer to Figure 10A to Figure 15B A third embodiment according to the present invention will be described. Figure 10A , Figure 10B , Figure 11A and Figure 11B It is a schematic diagram of the substrate 14 and the driving layer used in the third embodiment. Figure 10A is a cross-sectional view of the substrate 14 and the drive layer, Figure 10B is viewed from the direction of arrow F Figure 10A A plan view of the substrate 14 is shown.
[0085] Note that in Figure 10A and Figure 10B In , for easy understanding, the pressure chamber 3 as the element substrate 1, the flow rate reducing portion 6, and the communication hole 7 are shown by dotted lines (see Figure 2A and Figure 2B )Area.
[0086] Such as Figure 10A As shown, a diaphragm 4 as a driving layer, a first electrode 9 , a piezoelectric element 8 and a second electrode 10 are formed on a substrate 14 which is a single crystal silicon substrate. The diaphragm 4 and the first electrode 9...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More