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A kind of semiconductor device and its manufacturing method and electronic device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electrical solid devices, and manufacturing microstructure devices, etc., can solve the problems of reducing the sensitivity of MEMS pressure sensors, convex deformation of pressure sensing films, and peeling of germanium and silicon layers, etc., so as to avoid The problem of peeling of the silicon germanium layer of the pressure sensing film, good heat insulation effect, and the effect of large process window

Active Publication Date: 2017-05-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] When the MEMS pressure sensor is manufactured using the prior art, the formed pressure sensing film has a compressive stress (about 200Mpa), and the existence of the compressive stress causes the pressure sensing film to bulge and deform, thereby reducing the sensitivity of the MEMS pressure sensor
The ideal pressure sensing membrane is flat and free of stress. Laser annealing is currently a relatively effective method to release the stress of the pressure sensing membrane, but the existing laser annealing process easily leads to the delamination of the amorphous carbon used as the sacrificial layer. and the emergence of germanium-silicon layer peeling problems during the release of amorphous carbon

Method used

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  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device
  • A kind of semiconductor device and its manufacturing method and electronic device

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Experimental program
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Embodiment 1

[0052] Below, refer to image 3 and Figures 4A-4C The manufacturing method of the MEMS pressure sensor of the present invention is described in detail.

[0053] refer to Figure 4A , first perform step 301, providing a substrate 400, an interlayer dielectric layer 401 is formed on the substrate 400, a bottom electrode 402 is formed in the interlayer dielectric layer 401, and a bottom electrode 402 is deposited and formed on the bottom electrode 402. sacrificial layer 404 . A top electrode interconnection structure 403 is also formed outside the bottom electrode 402 .

[0054] The base 400 includes at least a semiconductor substrate, wherein the semiconductor substrate can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), stack-on-insulator Silicon germanium (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc. Active devices and / or passive devices are also formed in th...

Embodiment 2

[0096] The present invention also provides a semiconductor device manufactured by the method in Embodiment 1, which has good reliability and sensitivity.

Embodiment 3

[0098] The present invention also provides an electronic device, which includes the above-mentioned semiconductor device.

[0099] The electronic device also has the above advantages due to the higher sensitivity and reliability of the included semiconductor devices.

[0100] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor device, for example: a mobile phone motherboard with the integrated circuit, etc.

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Abstract

The present invention provides a semiconductor device and a production method thereof, and an electronic apparatus. The production method comprises: providing a substrate, forming an interlayer dielectric layer on the substrate, and forming a bottom portion electrode in the interlayer dielectric layer; depositing above the bottom portion electrode to form a sacrifice layer; forming a pressure sensing film on the sacrifice layer and the partial interlayer dielectric layer; etching the pressure sensing film to form an opening so as to expose the partial sacrifice layer, and removing the sacrifice layer; forming an oxide layer on the pressure sensing film and the partial interlayer dielectric layer to fill the opening so as to form a closed cavity; and performing a laser annealing step to release the stress inside the pressure sensing film. According to the method of the present invention, the laser annealing treatment is performed after the sacrifice layer is released, such that the process window is large, the pressure on the pressure sensing film can be well regulated, and the yield and the sensitivity of the pressure sensor are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, in the market of motion sensor products, smart phones, integrated CMOS and micro-electromechanical system (MEMS) devices have increasingly become the most mainstream and advanced technology, and with the update of technology , the development direction of this type of transmission sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Among them, MEMS pressure sensors are widely used in automotive electronics: such as TPMS, engine oil pressure sensor, air pressure sensor of automobile brake system, automobile engine intake manifold pressure sensor (TMAP), diesel common rail pressure sensor; consumer electronics: such as tire pressure Meters, sphygmomanometers, cab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00G01L1/00
Inventor 张先明丁敬秀
Owner SEMICON MFG INT (SHANGHAI) CORP