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A kind of cr2o3 film system and preparation method thereof

A cr2o3 thin film technology, applied in the field of Cr2O3 thin film system and its preparation, can solve the problems of reducing the service life of the device, easy cracks in the film, affecting the performance of the film, etc., and achieve the effect of relieving stress, preventing cracking and peeling, and low cost

Active Publication Date: 2018-08-28
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there are many literatures on the preparation of Cr by sputtering 2 o 3 Thin films have been reported in detail, but due to Cr 2 o 3 The coefficient of thermal expansion of the film and the metal substrate is very different, and the Cr deposited directly on the metal 2 o 3 Films are prone to defects such as cracks, which will affect the performance of the film and even reduce the service life of the device

Method used

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  • A kind of cr2o3 film system and preparation method thereof
  • A kind of cr2o3 film system and preparation method thereof
  • A kind of cr2o3 film system and preparation method thereof

Examples

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Embodiment 1

[0030] 1) Substrate cleaning: After the oxygen-free copper substrate is ultrasonically cleaned by acetone and alcohol for 15 minutes, put it into the vacuum chamber until the vacuum reaches 5×10 -2 After Pa, the cavity is heated to 200°C, baked for 20 minutes and then cooled to 60°C; when the vacuum reaches 3×10 -3 After Pa, use Ar + Ion beam cleaning of substrates, Ar + The ion beam energy is 200eV, the beam current is 200mA, and the cleaning time is 15min.

[0031] 2) Preparation of Cr-Cu transition layer: The Cr-Cu transition layer was prepared by co-sputtering method. Introduce Ar gas, adjust the air pressure to 1.0Pa, turn on the two radio frequency sputtering power supplies, and sputter for 2min at Cu target and Cr target powers of 40W and 60W respectively.

[0032] 3)Cr 2 o 3 Thin film preparation: deposition of Cr by ion beam assisted reactive sputtering 2 o 3 film. Introduce Ar gas and oxygen, adjust the air pressure to 0.8Pa, wherein the partial pressure of o...

Embodiment 2

[0035] 1) Substrate cleaning: 304 polished stainless steel substrates were ultrasonically cleaned with acetone and alcohol for 15 minutes, and placed in a vacuum chamber until the vacuum reached 1×10 -2 After Pa, the cavity is heated to 350°C, baked for 20 minutes and then cooled to 40°C; when the vacuum reaches 1.4×10 -3 After Pa, use Ar + Ion beam cleaning of substrates, Ar +The ion beam energy is 100eV, the beam current is 100mA, and the cleaning time is 20min.

[0036] 2) Preparation of Cr-Fe transition layer: The Cr-Fe gradient transition layer was prepared by co-sputtering method. Introduce Ar gas, adjust the air pressure to 0.4Pa, turn on two DC sputtering power supplies, and obtain transition layers with different Fe:Cr ratios by adjusting the sputtering power of Fe target and Cr target. Sputtering at 0.5A and 0.2A for 2min, then sputtering at Fe target and Cr target at sputtering currents of 0.3A and 0.3A for 2min, and finally at Fe target and Cr target at sputteri...

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Abstract

The invention relates to a Cr2O3 film system and a preparing method thereof. A metal material serves as the substrate of the system, and the substrate is covered with a Cr2O3 film; or a Cr-M serves as a transition layer on the substrate, and the transition layer is covered with the Cr2O3 film. Before preparation, vacuum heating drying and Ar+ beam ion cleaning are conducted on the substrate, so that pollution of the substrate and the film is reduced; then, a co-sputtering method is used for depositing the Cr-M transition layer on the surface of the substrate; and finally, the method of assisting reactive sputtering through ion beams is adopted for sputtering a Cr2O3 film on the surface of the transition layer. With the method, stress of the Cr2O3 film and the metal substrate can be effectively relieved, cracking and stripping of the film are avoided, and the combining force of the film and the substrate is obviously improved. According to the Cr2O3 film system and the preparing method thereof, the quality of the film is comprehensively ensured from various aspects, and the sputtering efficiency is greatly improved.

Description

technical field [0001] The invention belongs to the field of thin film technology, in particular to a Cr 2 o 3 Thin film systems and methods for their preparation. Background technique [0002] Chromium oxide (Cr 2 o 3 ) thin film is one of the thin film materials that have been developed and paid attention to in recent years. It has the characteristics of strong chemical stability, good high temperature resistance, small friction coefficient, high hardness, strong abrasion resistance, and strong bonding force with the substrate. It is widely used It is used for the barrier layer of microelectronic devices, the protective layer of wear devices, and the cylinder inner wall of gas bearing automobiles, etc. [0003] Currently, Cr 2 o 3 The main preparation methods of thin films are ion plating, magnetron sputtering, in-situ oxidation and so on. The thin film deposited by magnetron sputtering has the advantages of flat surface, compactness and high precision. Although a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/16C23C14/08C23C28/00
CPCC23C14/0052C23C14/08C23C14/16C23C14/3464C23C28/00
Inventor 张华李帅吕琴丽吴云翼何迪张超雷洋刘晓鹏
Owner GRIMAT ENG INST CO LTD
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