Power conversion device and elevator using the power conversion device

Abstract

The invention provides a power conversion device and an elevator using the power conversion device. In a condition that a drive circuit with a multilayer substrate enables simultaneous on-off of a plurality of semiconductor switch elements, through making flowing of currents towards a loop path of a drive circuit side, fostering of current imbalance between the plurality of the semiconductor switch elements is suppressed. A plurality of conducting layers of the multilayer substrate of the drive circuit which enables simultaneous on-off of the plurality of semiconductor switch elements which are in parallel connection is provided at different positions in a thickness direction with a first conducting layer having the same potential as a second terminal (a source electrode or an emitter electrode) of a first semiconductor switch element, a second conducting layers having the same potential as a second terminal of a second semiconductor switch element and a third conducting layer having the same potential as a first terminal (grid electrode) of a first semiconductor switch element. The third conducting layer is clamped between the first conducting layer and the second conducting layer.

Description

technical field [0001] The present invention relates to a power conversion device and an elevator using the power conversion device. Background technique [0002] At present, in the variable-speed driving of elevators and the like, it is common to convert electric power into variable-frequency alternating current via an inverter to drive a motor. [0003] Figure 13 This is a conventional example of a power conversion device. exist Figure 13 A schematic configuration of an inverter is shown as an example of a generally used power conversion device. exist Figure 13 Among them, 10 , 30 , and 50 represent one phase of an inverter circuit, which converts the DC power smoothed by the capacitor 11 into AC with variable frequency, and drives the motor 12 . 111, 211, 311, 411, 511, and 611 denote semiconductor switching elements, and an example using an IGBT is shown here. 112 , 212 , 312 , 412 , 512 , and 612 are diodes, which are respectively connected in antiparallel to the ...

AI Technical Summary

Problems solved by technology

In this case, as already described, when a current imbalance occurs among a plurality of semiconductor switching elements, the current imbalance will be promoted, and the following problems will arise. A semiconductor switching element, therefore shortening the life of the semiconductor switching element

[0015] In addition, the IGBT has been described as an example in the description so far, but since the same source loop as the emitter loop exists in a MOSFET, etc., the loop path (emitter loop) on the drive circuit side road or source loop) will create the same problem

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