High-current power semiconductor module
A technology of power semiconductors and semiconductors, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve the problems of high cost and large size, and achieve small size, enhanced heat dissipation, and improved flow. effect of ability
Active Publication Date: 2016-03-23
HUBEI TECH SEMICON
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Problems solved by technology
If the customer needs a power semiconductor module with high flow capacity, it is recommended to choose a module with a high current gear, which is equipped with a chip with a larger diameter, and the overall size is large and the cost is too high
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[0025] Structure of the present invention and original design structure such as figure 1 , figure 2 , image 3 , Figure 4 , Figure 6 shown. The current power semiconductor module of the present invention includes a heat dissipation bottom plate 1, a lower casing cover 2, an upper casing cover 16, an insulating heat conducting sheet 3, a first bending electrode 5, a second bending electrode 6, an electrode 7, a first semiconductor chip 4, a second bending electrode Two semiconductor chips 8, plastic fasteners 9, gate components 10 and silicone gel or silicone gel rubber layer filled inside. The molybdenum sheet surfaces of the first semiconductor chip 4 and the second semiconductor chip 8 are both facing downward, and the front mounting method is adopted, so that the heat dissipation capability of the first semiconductor chip 4 is enhanced, and the flow capacity of the module product is enhanced. The first bending electrode 5, the second bending electrode, and the elect...
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The invention relates to a high-current power semiconductor module, belongs to the technical field of power semiconductor devices, and mainly solves a problem that an existing mounting dimension power semiconductor module is insufficient in on-state current. The high-current power semiconductor module is mainly characterized by comprising a heat dissipation base plate, a shell, insulating heat-conducting fins, a first bending electrode, a second bending electrode, an electrode, a first semiconductor chip, a second semiconductor chip, a plastic fastener, a gate-pole assembly and a silica gel or silica gel rubber layer filled therein; the first semiconductor chip and the second semiconductor chip are positively arranged with molybdenum plate sides facing downward, the first bending electrode, the second bending electrode and the electrode are electrodes with a sheet structure, contact portions between the first bending electrode, the second bending electrode and the electrode and the first semiconductor chip and the second semiconductor chip are additionally provided with a convex table top, and the first bending electrode, the second bending electrode and the electrode are electrodes molded by one-time punching. The high-current power semiconductor module has the advantage that the power semiconductor module is enabled to be high in through-current capability, and requirements of small dimension and high through-current capability for the power semiconductor module of equipment such as AC / DC motors, rectification power supplies, frequency converters, electric welding machines and the like can be met.
Description
technical field [0001] The invention belongs to the technical field of power semiconductor devices. It specifically relates to a high-current power semiconductor module whose structure and performance are greatly improved in the production and fabrication process. Background technique [0002] At present, the product structure of high-current modules mostly consists of a heat dissipation base plate 11, two insulating and heat-conducting sheets 3, a plastic casing 12, a second semiconductor chip 8, a first semiconductor chip 4, two pressing blocks 13, two round electrodes 14, and a common lead-out The electrode 15, the gate assembly 10, the fastener, and the silicon gel (rubber) glue layer filled inside, such as figure 2 As shown, in this structure, the chip assembly method adopts the second semiconductor chip 8 to be mounted upright (the molybdenum sheet faces down) and the first semiconductor chip 4 is reversely mounted (the molybdenum sheet faces up), and the distance bet...
Claims
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IPC IPC(8): H01L25/07H01L23/367H01L23/48
Inventor 孙伟杨成标刘婧邢雁李新安王维孙娅男周霖
Owner HUBEI TECH SEMICON