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A read-only storage unit and a read-only memory

A read-only memory and read-only storage technology, applied in the semiconductor field, can solve the problems of large footprint, low reading accuracy, and slow reading speed

Active Publication Date: 2019-09-27
SPREADTRUM COMM (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing ROM cells usually have only one bit line, which usually has the problem of slow reading speed or low reading accuracy and occupies a large area

Method used

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  • A read-only storage unit and a read-only memory
  • A read-only storage unit and a read-only memory
  • A read-only storage unit and a read-only memory

Examples

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Embodiment Construction

[0023] In the prior art, a read-only memory unit (hereinafter referred to as a ROM unit) usually has a bit line and a word line, which can adopt the following two structural forms according to different ways of reading information:

[0024] figure 1 A schematic structural diagram of a ROM unit in the prior art is shown. Such as figure 1 The shown ROM cell may include: a transistor 11, a word line WL12, a bit line BL13 and an inverter 14, wherein the gate terminal of the transistor 11 is connected to the word line WL12, the source terminal is connected to the ground line 15, and the drain terminal is connected to the bit line line BL13, and the bit line BL13 is also connected to the input terminal of the inverter 14.

[0025] When reading the data stored in the ROM cell, the word line WL12 is opened, and since the drain terminal of the transistor 11 is connected to the bit line BL13, the bit line BL13 is connected to the ground line 15 (VSS), so that the level signal of the b...

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Abstract

The invention relates to a read only memory cell and a read only memory. The read only memory cell comprises a transistor, a word line, a first bit line, a second bit line and a difference-sensitive amplifier, the word line is connected with the grid terminal of the transistor, the drain terminal of the transistor is connected with the first bit line or the second bit line according information stored in the read only memory cell, and the first bit line and the second bit line are respectively connected with the forward input terminal and the reverse input terminal of the difference-sensitive amplifier. The above scheme can improve the reading speed of the read only memory cell and reduces the occupied area of the read only memory cell.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a read-only storage unit and a read-only memory. Background technique [0002] Read-only memory (Read-Only Memory, ROM) is a solid-state semiconductor memory that can only read data stored in advance. Its characteristic is that once the data is stored, it cannot be changed or deleted. It is usually used in electronic or computer systems that do not need to change the data frequently, and the data will not be lost due to power off. The data stored in the ROM is usually written in advance before loading the whole machine, and can only be read during the working process of the whole machine. Unlike random access memory, it can be rewritten quickly and easily. The data stored in ROM is stable, and the stored data will not change after power failure; its structure is relatively simple, and it is more convenient to read, so it is often used to store various fixed programs and d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C17/12
Inventor 于跃王林黄瑞锋吴守道
Owner SPREADTRUM COMM (SHANGHAI) CO LTD
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