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A kind of preparation method of n-type copper oxide film

A copper oxide, thin film technology, applied in ion implantation plating, metal material coating process, coating and other directions, to achieve good repeatability, good crystallinity and high purity

Inactive Publication Date: 2017-10-20
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the deficiencies of the existing methods for preparing copper oxide thin films, and provide a method for preparing n-type copper oxide thin films with simple operation, good crystallinity, high purity and good repeatability, and only one step is required

Method used

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  • A kind of preparation method of n-type copper oxide film
  • A kind of preparation method of n-type copper oxide film
  • A kind of preparation method of n-type copper oxide film

Examples

Experimental program
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Effect test

Embodiment 1

[0015] Ordinary glass substrates were ultrasonically cleaned in acetone, ethanol, and deionized water for 5 minutes in sequence, and dried with nitrogen. Weigh 2 g of copper oxide powder (content ≥ 99.9%), put it in a metal mold with a diameter of 2 cm and press the target with a tablet press to obtain a copper oxide target. The cleaned ordinary glass substrate and copper oxide target are transported to the deposition chamber of the laser pulse deposition equipment by a robot, and the deposition chamber is evacuated to 1×10 with a mechanical pump and a molecular pump. -4 Pa, adjust the distance between the glass substrate and the copper oxide target to be 6cm, then heat the glass substrate to 500°C, then open the oxygen vent valve, feed oxygen into the deposition chamber, and turn on the mass flow meter to control the oxygen flow to 18sccm, Adjust the pressure of the deposition chamber to 8Pa. Use a KrF excimer pulse laser with a wavelength of 248nm to adjust the optical path...

Embodiment 2

[0018] In this example, the pressure of the deposition chamber is adjusted to 12Pa, and other steps are the same as in Example 1 to obtain an n-type copper oxide film with a thickness of 220nm (see image 3 ). The electron concentration of the copper oxide film measured by the Hall effect measuring instrument is 5.5×10 15 cm -3 , The mobility is 1.0cm 2 / Vs, resistivity 7.9×10 2 Ω·cm, and its Hall coefficient is negative, indicating that the film is an n-type copper oxide film.

Embodiment 3

[0020] In this embodiment, the substrate used is a quartz glass substrate, and the heating temperature of the substrate is 600°C. The other steps are the same as in Embodiment 1 to obtain an n-type copper oxide film with a thickness of 250nm (see Figure 4 ). The electron concentration of the copper oxide film measured by the Hall effect measuring instrument is 2.8×10 15 cm -3 , The mobility is 3.9cm 2 / Vs, resistivity 6.4×10 2 Ω·cm, and its Hall coefficient is negative, indicating that the film is an n-type copper oxide film.

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Abstract

The invention discloses a preparation method of an n type copper oxide thin film. The pulse laser deposition technology is adopted for the method, and the n type copper oxide thin film can be formed on a substrate through one step by regulating the oxygen pressure intensity of a deposition chamber to 8-12 Pa and regulating the heating temperature of the substrate to 500-700 DEG C. The preparation method is easy to operate, the prepared n type copper oxide thin film is good in crystallinity and high in purity, and the method is good in repeatability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor film material preparation, and in particular relates to a preparation method of an n-type copper oxide film. Background technique [0002] Copper oxide is a very important semiconductor material. Due to the existence of intrinsic defect copper vacancies, most of copper oxide is p-type conductive. Due to good electrical and optical properties, low material cost, non-toxicity and other advantages, it has attracted more and more attention. Copper oxide has been widely used in gas sensors, transistors and optoelectronic instruments. The band gap of copper oxide is 1.2-1.9eV, which is very suitable for photovoltaic materials. In theory, the conversion efficiency of copper oxide p-n junction solar cells can reach 31%, so it has also received more and more attention in the application of solar cells. Finding a way to prepare n-type copper oxide is of great significance for the application of copp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/28
CPCC23C14/087C23C14/28
Inventor 高斐胡西红向玉春王皓石郑逍遥武慧君姜杰轩李娟
Owner SHAANXI NORMAL UNIV